Transistor 2N2222

Prévia do material em texto

2N2222 / 2N2222A 
NPN Silicon Epitaxial Planar Transistor 
for switching and AF amplifier applications. 
The transistor is subdivided into one group 
according to its DC current gain. As complementary 
type the PNP transistor ST 2N2907 and ST 
2N2907A are recommended. 
On special request, these transistors can be 
manufactured in different pin configurations. 
 
TO-92 Plastic Package 
Weight approx. 0.19g 
 
Absolute Maximum Ratings (Ta = 25 OC) 
Value Symbol 
ST 2N2222 ST 2N2222A 
Unit 
Collector Base Voltage VCBO 60 75 V 
Collector Emitter Voltage VCEO 30 40 V 
Emitter Base Voltage VEBO 5 6 V 
Collector Current IC 600 mA 
Power Dissipation Ptot 625 mW 
Junction Temperature Tj 150 OC 
Storage Temperature Range TS -55 to +150 OC 
G S P FORM A IS AVAILABLE 
 
 
 
 2N2222 / 2N2222A 
Characteristics at Tamb=25 OC 
 Symbol Min. Typ. Max. Unit 
DC Current Gain 
 at IC=0.1mA, VCE=10V 
 at IC=1mA, VCE=10V 
 at IC=10mA, VCE=10V 
 at IC=150mA, VCE=10V 
 at IC=500mA, VCE=10V 
ST 2N2222 
ST 
2N2222A 
hFE 
hFE 
hFE 
hFE 
hFE 
hFE 
35 
50 
75 
100 
30 
40 
- 
- 
- 
- 
- 
- 
- 
- 
- 
300 
- 
- 
- 
- 
- 
- 
- 
- 
Collector Cutoff Current 
 at VCB=50V 
 at VCB=60V 
ST 2N2222 
ST 
2N2222A 
ICBO 
ICBO 
- 
- 
- 
- 
0.01 
0.01 
µA 
µA 
Collector Base Breakdown Voltage 
 at IC=10µA ST 2N2222 
ST 
V(BR)CBO 
V(BR)CBO 
60 
75 
- 
- 
- 
- 
V 
V 
Collector Emitter Breakdown Voltage 
 at IC=10mA ST 2N2222 
ST 
V(BR)CEO 
V(BR)CEO 
30 
40 
- 
- 
- 
- 
V 
V 
Emitter Base Breakdown Voltage 
 at IE=10µA ST 2N2222 
ST 
V(BR)EBO 
V(BR)EBO 
5 
6 
- 
- 
- 
- 
V 
V 
Collector Saturation Voltage 
 at IC=150mA, IB=15mA 
 
 at IC=500mA, IB=50mA 
ST 2N2222 
ST 
2N2222A 
ST 2N2222 
VCE(sat) 
VCE(sat) 
VCE(sat) 
VCE(sat) 
- 
- 
- 
- 
- 
- 
- 
- 
0.4 
0.3 
1.6 
1 
V 
V 
V 
V 
Base Saturation Voltage 
 at IC=150mA, IB=15mA 
 
 at IC=500mA, IB=50mA 
ST 2N2222 
ST 
2N2222A 
ST 2N2222 
VBE(sat) 
VBE(sat) 
VBE(sat) 
VBE(sat) 
- 
0.6 
- 
- 
- 
- 
- 
- 
1.3 
1.2 
2.6 
2.0 
V 
V 
V 
v 
Gain Bandwidth Product 
 at IC=20mA, VCE=20V, f=100MHz fT 250 - - MHz 
Collector Output Capacitance 
 at VCB=10V, f=1MHz Cob - - 8 pF 
Input Capacitance 
 at VCB=0.5V, f=1MHz Cib - - 30 pF 
G S P FORM A IS AVAILABLE 
 
 
1000
700
500
300
200
100
70
50
30
20
10
0.1
h
FE
, D
C
 C
U
R
R
EN
T 
G
A
IN
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 K
VCE=1.0V
VCE=10V
TJ=125 C
25 C
-55 Co
o
o
IC, COLLECTOR CURENT (mA)
Figure 1. DC Current Gain
IB, BASE CURENT (mA)
0.3VC
E,
 C
O
LL
EC
TO
R
-E
M
IT
TE
R
 V
O
LT
A
G
E 
(V
O
LT
S)
0.01
0
0.005
0.4
0.6
1.0
0.8
0.03 0.05 0.1 0.2 100.5 1.0 2.0 3.0 5.0 5020 30
Figure 2. Collector Saturetion Region
0.2
0.02
IC=1.0mA 10mA 150mA 500mA
oTJ= 25 C
 2N2222 / 2N2222A 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
o
VCE=20V
TJ= 25 C
10
7.0
0.20.1
2.0
3.0
5.0
0.50.3 0.7 2.0 5.03.0 7.0
10
20
30
20
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
30 501.0
IC, COLLECTOR CURRENT (mA)
3.0
fT
, C
U
R
R
EN
T-
G
A
IN
 B
A
N
D
W
ID
TH
 P
R
O
D
U
C
T 
(M
H
z)
70
50
1.0 2.0
300
100
200
500
105.0 7.0 20 30 50
Figure 4. Current-Gain Bandwidth Product
70 100
Ceb
Ccb
 2N2222 / 2N2222A