16 - Apêndice - Folhas de Dados

Prévia do material em texto

Apêndice - Folhasde Dados
@
MOTOROLA
Sel'niconductors
BOX 20912 - PHOENIX ARIZONA 85036
Designers'" Data Sheet
"SURMETIC"'" RECTIFIERS
. . . subminiaturesize,axialleadmounted rectifiers for general-pur-
pose low-power applications.
Designers Data for "Worst Case" Conditions
The Deslgners'" Data Sheets permit lhe design 01most circuits enlirely
Irom lhe inlorma!ionpresenled.Umil curves -represenling boundarieson
device characteristics-are given 10lacilate "worst case" designo
*MAXIMUM RATINGS
*ELECTRICAL CHARACTERISTICS
, Indicates JEOEC Regislered Data.
MECHANICAL CHARACTERISTICS
CASE: Void Iree. Transler Molded
MAXIMUMLEADTEMPERATUREFORSOLDERINGPURPOSES:350"C. 3/8" Irom
case lor 10 seconds ai 5lbs. lension
FINISH: Ali extemal surfaces are corrosion-resistan!, leads are readily solderable
POLARITY: Calhode Indicaled by color band
WEIGHT: 0.40 Grams (approxima!ely)
'"Trademark 01Motorala Inc.
1N4001
thru
1N4007
LEAD MOUNTED
SILlCON RECTIFIERS
50-1000 VOLTS
DIFFUSED JUNCTION
---JVI.--B
'--,~DK
L
~
A
CATHO'D(=3
BAND 1
K
~
CASE59-04
DoesNo!Conlorm!o 00-41 Outline.
@MOTOROLAINC., 1975 OS601'
702
--
;; '" '" v "' '" ....o o o o o oo o o o o o ov v v v v v v
Ra!lng Symbol :: :: :: :: :: :: :: Uni!
Peak Repetltive Raversa Voitage VRRM
Working Peak Revarse Voitaga VRWM 50 tOO 200 400 600 800 tOOO Volts
OC Biooking Voltaga VR
Non-Repetiliva Peak Reversa Voitage
VRSM 80 t20 240 480 720 tooo t200 Voils
(halfware. singie phase. 60 Hz)
RMS Revarse Voitage VR(RMS)
35 70 t40 280 420 560 700 Voils
Average Rectffied Forward Currenl
10(singie phase. resistiveload, 1.0 Amp
60 Hz. see Figure 8. TA = 75"C)
N( ; :fa a urre nt iFSM 30 (for I cyele) Amp
condit!ons, see Figure 2)
Operating anO Storage Junction
TJ, Tstg
-6510+175 "C
Temparature Rangle
Charactorls!lcs and Condl!lons Symbol Typ Max Uni!
MaxlmumInstantaneousForwardVoltageOrop vF 0.93 1.1 Volts
(IF= 1.0Amp.TJ= 25"C)FigureI
MaxlmumFull-CycleAverageForwardVoltageOrop
VF(AV) - 0.8 Volts(10= 1.0Amp,Te = 75"C.llnch leads)
MaxlmumReverseCu"enl (raleddcvoltage) IR "ATJ= 25'C 0.05 10
T = lOO"C 1.0 50
MaximumFull-CycleAverageReverseCurrent IR(AV)
- 30 "A
(10= 1.0Amp. Te = 75"C, Ilnchleads)
MILlIMETERS INCHES
OIM MIN MAX MIN MAX
A 5.97 6.60 0.235 0.260
B 2.79 3.05 0.110 0.120
O 0.76 0.86 0.030 0.034
K 27.94 - 1.100 -
Apêndice 703
@
MOTOROLA
Selniconductors
BOX 20912 - PHOENIX ARIZONA 85036
Designers'" Data Sheet
500-MILLlWATT HERMETICALLY SEALED
GLASS SILlCON ZENER DIODES
. Complete Voltage Range 2.4 to 91 Volts
. DO-35 Package Smaller than Conventional DO-7 Package
. Double Slug Type Constructlon
. Metallurgically Bonded Construction
. Nitrlde Passivated Die
Deslgners Data for "Worst Case" Conditions
The Designers" Data Sheets permit lhe design of most circuits entirely
frem the information presented. Limit curves representing boundaries on
device characteristics are given to facilitate "worst case" designo
MAXIMUM RATINGS
, Indicates JEDEC Regietered Date.
MECHANICAL CHARACTERISTICS
CASE: Double slug type, hermeticelly sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230'C, 1/16"
frem case for 10 seconds.
FINISH: Ali external 5urfaces are corrosion resistant with readily solderable leads.
POLARITY: Cathode indicated by color bando When operated in zener moda, cathode
will be positiva with respect to anode.
MOUNTING POSITION: Any
STEADYSTATEPOWEROERATING
gO.7
~06
z
~05
00-
Bj 0.4
i5
a:
~ 0.3o00-
~ 0.2
:;
~0.1
~ O
O 20 40 60 80 100 120 140 160 180 200
TL' LEAO TEMPERATURE (DC)
"Trademerk 01Motorole Inc.
1N746
thru
1N759
1N957
thru
1N984
1N4370
thru
1N4372
GLASS ZENER DIODES
500MILLlWATTS
2.4-91VOLTS
I-~--I
J~L
-FI
ç
-it
L --.l
frF--
L~
AliJEDECdimensionsandnotesapply.
CASE 299-01
DO-35
NOTE
1.POLARITYOENOTEOBYCATHOOEBANO.
2. LEAOOIAMETERISNOTCONTROLLED
WITHINOIMENSION"F".
@ MOTOROLA INC., 1977 DS 7021 R2
Ratlng Symbol Value Unit
DCPowerDlssipetion@TL< 50.C, Po
LeadLenght= 3/8"
'JEDECReglstretion 400 mW
oDerateeboveTL=50'C 3.2 mwrc
MotoraleDeviceRetings 500 mW
DerateeboveTL= 50'C 3.33 mwrc
OperetingendStoregeJunction TJ, Tstg .c
Temperature Renge
'JEDEC Registration -65to+175
Motorole Device Ratings - 65 to +200
T =
MOTOROLA
OEVICES '! -1
" .:',-
JEOEC
-b18'H/8' -
REGSTRATION
-
"
-
"
""" " .....
""""
MllLlMETERS INCHES
OIM MIN MAX MIN MAX
A 3.05 5.08 0.120 0.200
B 1.52 2.29 0.060 0.090
O 0.46 0.56 0.018 0.022
F - 1.27 - 0.050
K 12.70 - 0.500 -
704 Eletrônica - 4g Edição - Volume 1
ELETRICAL CHARACTERISTICS (TA =25°C. VF = 1.5 V max a1200 mA for ali types)
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION
.LeI! colurnn based upon JEDEC Registration, right colurnn based upon Motorola rating.
NOTE 3: ZENER IMPEDANCE (Zz) DEVIRATION
Tolerance Deslgnatlon
The type numbers show have tolerance designations
as follows:
1N4370 serias: ,,10%, suffixAfor ,,5% unils.
1N746 serias: ,,10%, suffixAfor ,,5% units.
1N957 serias: ,,20%, suffixAfor ,,10% units.
suffix B for ,,5% unils.
NOTE2: ZENERVOLTAGE(Vz)MEASUREMENT
Nominal zener vollage is measured wilh lhe device
junction in Ihermal equilibrium ai lhe lead temperatura of
3o"C "tc and 3/8" lead lenght.
Zzr and ZZK are measures by dividing lhe ac vollage
drop across lhe device by lhe ac currenl applied. The
specified limits are for Iz(ac) = 0.1 Iz(dc) wilh lhe ac
frequency = 60 Hz.
NOTE 4: MAXIMUM ZENER
CURRENT RATINGS (IZM)
Maximum zener currenl ralings are based on lhe
maximum vollage of a 10% 1N746 type unit or a 20%
1N957 type unit. For Glosar lolerance unils (10% or 5%)
or unils where lhe actual zener vollage (Vz) is known ai
lhe operaling poinl, lhe maximum zener currenl may be
increased and is limited by lhe deraling curve.
Nominal *Maxlmum Maxlmum Reveree LeakageCurrent
Zener Voltage Tes! Maxlmum Zener Impedance DCZener Curent
Type Vz@ Izr Current Zzr @Izr IZM TA=25°C TA = 150°C
Number (Note2) Izr (Note 3) (Note 4) IR@VR=1V IR@VR=1V
(Note 1) Volts mA Ohms mA i1A i1A
1N4370 2.4 20 30 150 190 100 200
1N4371 2.7 20 30 135 165 75 150
1N4372 3.0 20 29 120 150 50 100
1N746 3.3 20 28 110 135 10 30
1N747 3.6 20 24 100 125 10 30
1N748 3.9 20 23 95 115 10 30
1N749 4.3 20 22 85 105 2 30
1N750 4.7 20 19 75 95 2 30
1N751 5.1 20 17 70 85 1 20
1N752 5.6 20 11 65 80 1 20
1N753 6.2 20 7 60 70 0.1 20
1N754 6.8 20 5 55 65 0.1 20
1N755 7.5 20 6 50 60 0.1 20
1N756 8.2 20 8 45 55 0.1 20
1N757 9.1 20 10 40 50 0.1 20
1N758 10 20 17 35 45 0.1 20
1N759 12 20 30 30 35 0.1 20
Nominal Maxlmum Zener Impedance *Maxlmum Maxlmum RevereeCurrent
Zener Voltage Tes! (Note3) DCZener Curent
Type Vz Current IZM
Number (Note 2) Izr Zzr@lzr Zzr@lzr IZK (Note4) IRMaxlmum Test Voltage Vdc
(Note 1) Volts mA Ohms Ohms mA mA i1A 5% VR 10%
1N957 6.8 18.5 4.5 700 1.0 47 61 150 5.2 4.9
1N958 7.5 16.5 5.5 700 0.5 42 55 75 5.7 5.4
1N959 8.2 15 6.5 700 0.5 38 50 50 6.2 5.9
1N960 9.1 14 7.5 700 0.5 35 45 25 6.9 6.6
1N961 10 12.5 8.5 700 0.25 32 41 10 7.6 7.2
1N962 11 11.5 9.5 700 0.25 28 37 5 8.4 8.0
1N963 12 10.5 11.5 700 0.25 26 34 5 9.1 8.6
1N964 13 9.5 13 700 0.25 24 32 5 9.9 9.4
1N965 15 8.5 16 700 0.25 21 27 5 11.4 10.8
1N966 16 7.8 17 700 0.25 19 37 5 12.2 11.5
1N967 18 7.0 21 750 0.25 17 23 5 13.7 13.0
1N968 20 6.2 25 750 0.25 15 20 5 15.2 14.4
1N969 22 5.6 29 750 0.25 14 18 5 16.7 15.8
1N970 24 5.2 33 750 0.25 13 17 5 18.2 17.3
1N971 27 4.6 41 750 0.25 11 15 5 20.6 19.4
1N972 30 4.2 49 1000 0.25 10 13 5 22.8 21.6
1N973 33 3.8 58 1000 0.25 9.2 12 5 25.1 23.8
1N974 36 3.4 70 1000 0.25 8.5 11 5 27.4 25.9
1N975 39 3.2 80 1000 0.25 7.8 10 5 29.7 28.1
1N976 43 3.0 93 1500 0.25 7.0 9.6 5 32.7 31.0
1N977 47 2.7 105 1500 0.25 6.4 8.8 5 35.8 33.8
1N978 51 2.5 125 1500 0.25 5.9 8.1 5 38.8 36.7
1N979 56 2.2 150 2000 0.25 5.4 7.4 5 42.6 40.3
1N980 62 2.0 185 2000 0.25 4.9 6.7 5 47.1 44.6
1N981 68 1.8 230 2000 0.25 4.5 6.1 5 51.7 49.0
1N982 75 1.7 270 2000 0.25 1.0 5.5 5 56.0 54.0
1N983 82 1.5 330 3000 0.25 3.7 5.0 5 62.2 59.0
1N984 91 1.4 400 3000 0.25 3.3 4.5 5 69.2 65.5
Apêndice 71
@
MOTOROLA
Sel'fticonductors
BOX 20912 - PHOENIX ARIZONA85036
NPN SILICON ANNULAR+ TRANSISTORS
. . . designed for general purpose switching and amplifier applications
and for complementary circuitry with types 2N3905 and 2N3906.
. High Voltage Ratings - BVCEa= 40 Volts (Min)
. Current Gain Specified trem 100 IAAto 100 mA.Complete Switching and Amplifier Specifications.Low Capacitance - Cob = 4.0 pF (Max)
2N3903
2N3904
NPN SILlCON
SWITCHING & AMPLIFIER
TRANSISTORS
,
iA1
SEATINGJ~ t-mJPLANE ~ K~
D--1Ir-"~L
=:] R 1-
lar
~
~
12
000 B
1 I-S
--1s0I
STYLEI
PINI EMiTTER
2 BASE
3 COLLECTOR
CASE 29-02
TO-92
@MOTOROLAiNC., 1973 DS 5127 R2
MAXIMUM RATINGS
Ratlng Symbol Value Unlt.Collector-Base Voltage VCB 60 Vdc.Collector-Emitter Voage VCEO 40 Vdc.Emitter-Base Voltage VEB 6.0 Vdc.Collector Current Ic 200 mAdc
Total Power Dissipation @TA = 60°C PD 250 mW
.. Total Power Dissipation @ TA = 25°C PD 350 mW
Derate above 25°C 2.8 mW/oC
.. Totai Power Dissipation @ T C = 25°C PD 1.0 Watts
Derate above 25°C 8.0 mW/oC
.. Junction Operating Temperalure TJ 150 °c
.. Slorage Temperature Range TsIg -55 to +150 °c
THERMAL CHARACTERISTICS
Characterlsllc Symbol Value Unll
Thermal Resistance. Junction 10Ambient ReJA 357 °cm
Thermal Resistance, Junction to Case ReJC 125 °cm.Indicates JEDEC Registered Data
.. Moloroia guarantees this data in addition to lhe JEDEC Registered Data.
. Annular Semiconductors Patented by Motoroia loco
MILLlMETERS INCHES
DlM MIN MA)( MIN MA)(
A 4.450 5.200 0.175 0.205
B 3.180 4.190 0.125 0.165
C 4.320 5.330 0.170 0.210
D 0.407 0.533 0.016 0.021
F 0.407 0.482 0.016 0.019
K 12.700 - 0.500 -
L 1.150 1.390 0.045 0.055
N - 1.270 - 0.050
P 6.350 - 0.250 -
a 3.430 - 0.135 -
R 2.410 2.670 0.095 0.105
S 2.030 2.670 0.080 0.105
706 Eletrônica - 4G Edição - Volume 1
.ELETRICAL CHARACTERISTICS (TA. 25°C uni... otheow;,;. noted)
Characterisllc I Flg.No. I Symbol I Mln Max Unll
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
(1) Pulse Tes!: Pulse Width = 300 ~, Duty Cycle = 2.0%.
'Indicales JEDEC Regislered Data FIGURE 2 - STORAGE ANO FALL TIME
FIGURE1- OELAYANORISETIME EQUIVALENTTESTCIRCUIT
EQUIVALEN"PTESTCIRCUIT 10<1,<500""-I I, t-300ns-I '= 109V
~
3'OV DUTYCYCLEO20Á5!
,0.9V +3.0V
DUTYCYCLEO2o/.
Bt
+ . 275 o
10k , '" 1P.k
-o5V ' O" ~~
. dOns C :~Çs<4.0PF' 1N916;.
~ -, 'Totalshuntcapacitanceot1.st.jigand~nn.ctors.-9.1V-"I- <1.0ns :V MOTOROLA Sem/conductors Products Inc,
--
Collector-Base Breakdown Voltage BVCBO Vdc
(IC=10j'Adc,IE=0) 60 -
Collector-Emitter Breakdown Vollage (I) BVCEO Vdc
(IC= 1.0mAdc, IB=O) 40 -
Emitter-Base Breakdown Voltage BVEBO Vdc
(lE= 10JAAdc, IC=O) 6.0 -
Collector Cutoff Currenl ICEX nAdc
(VCE = 30 Vdc, VEBloft)= 3.0 Vdc) - 50
Base Cutoff Currenl IBL nAdc
(VCE = 30 Vdc, VEB(oft)= 3.0 Vdc) - 50
DCCurrentGain(1) 15 hFE -
(Ic =0.1 mAdc, VOE= 1.0Vdc) 2N3903 20
-
2N3904 40 -
(Ic = 1.0 mAdc, VOE= 1.0Vdc) 2N3903 35 -
2N3904 70 -
(Ic= tOmAdo, VCE= 1.0Vdc) 2N3903 50 150
2N3904 100 300
(IC = 50 mAdc, VOE = 1.0Vdc) 2N3903 30 -
2N3904 60 -
(Ic = 100 mAdc, VOE= 1.0Vdc) 2N3903 15 -
2N3904 30 -
Collelor-Emitter Saturation Voltage (1) 16,17 VCEI,a!) Vdc
(IC = 10mAdc,IB= 1.0mAdC!
- 0.2
(IC = 50 mAdc, IB = 5.0 mAdc - 0.3
Base-Emitter Saturation Vollage (1) 17 VBE(sat) Vdc
Ic = 10 mAdc, IB= 1.0 mAdC 0.65 0.85
IC = 50 mAdc, IB = 5.0 mAdc - 0.95
Curent-Gain-aandwidthProduct t,- MHz
(Ic = 10mAdc,VOE=20Vdc,t= 100MHz) 2N3903 250 -
2N3904 300 -
Ouiput Capacitance 3 Cob pF
(VCB=5.0Vdc, IE = O,t= 100kHz) - 4.0
Inpul Capacilance 3 Cib pF
(VBE = 0.5 Vdc,IC= O,t= 100 kHz) - 8.0
Input Impedance 13 hl. kohms
(IC = 1.0 mAdc, VOE= 10Vdc, t= 1.0kHz) 2N3903 0.5 8.0
2N3904 1.0 10
Voltage Feedback Ratio 14 h,. X 10-4
(IC = 1.0 mAdc, VCE= 10Vdc, f= 1.0 kHz) 2N3903 0.1 5.0
2N3904 0.5 8.0
Small-Signal Current Gain 11 hte -
(IC = 1.0 mAdc, VOE = 10Vdc, t= 1.0kHz) 2N3903 50 200
2N3904 100 400
Oulpul Admittance 12 ho. ""hms
(IC = 1.0mAdc, VOE = 10Vdc, f= 1.0 kHz) 1.0 40
Noise Figure 9,10 NF dB
(Ic = 100 j'Adc, VOE = 5.0Vdc, Rs = 1.0 kohms, 2N3903 - 6.0
t= 10Hzlo 15.7 kHz) 2N3904 - 5.0
Delay Time (VCC = 3.0 Vdc, VBE(off) = 0.5 Vdc, 1,5 to
- 35 ns
Rise Time Ic= 10mAdc, IB1= 1.0mAdc) 1,5,6 t,. - 35 ns
Slorage Time (VCC = 3.0Vdc, IC = 10mAdc, 2N3903
2,7 ts - 175 ns- 200
IBI = IB2 = 1.0 mAdc) 2N3904 '50Fali Time 2,8 I, - ns