Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_623

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Step 1 of 3 5.044P Refer to Figure P5.44 in the text book. The drain current for N-channel MOSFET transistor is 0.1 The drain voltage is 0.3 V The gate voltage is 0V 1-0.3 = 0.1x10⁻³ = 0.1 = 7 kΩ Thus, the drain resistance RD is Step 2 of 3 The threshold voltage is 0.5 V The Length of the channel L is 0.4 µm The Width of the channel W is 5 µm To determine the value required for we need to know the voltage at the source, which can be easily found if we know This in turn can be determined from Toward that end, we note that since = 0.3 V is greater than the N-channel MOSFET transistor is operating in the saturation region, and we can use the saturation- region expression of to determine the required value of 10⁻³ = 1 0.04 = The over drive voltage is 0.2 V Step 3 of 3 The relation between and is, = 0.7 V The gate source voltage is 0.7 V and hence source voltage is -0.7 V -0.7-(-1) = 0.1x10⁻³ = kΩ Thus, the value of is