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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 14 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 14.28 For AsGaAl xx 1 system, a direct bandgap for 45.00 x , we have xEg 247.1424.1 At 45.0x , 985.1gE eV, so for the direct bandgap 985.1424.1 gE eV which yields 871.0625.0 m _______________________________________ 14.29 (a) From Figure 14.24, 64.1gE eV 756.0 64.1 24.124.1 gE m (b) From Figure 14.24, 78.1gE eV 697.0 78.1 24.124.1 gE m _______________________________________ 14.30 85.1 670.0 24.124.1 gE eV From Figure 14.23, 35.0x _______________________________________ 14.31 85.1 670.0 24.124.1 gE eV From Figure 14.24, 38.0x _______________________________________ 14.32 (a) For GaAs, 66.32 n and for air, 0.11 n . The critical angle is 86.15 66.3 1 sinsin 1 2 11 n n C The fraction of photons that will not experience total internal reflection is %81.8 360 86.152 360 2 C (b)Fresnel loss: 3258.0 166.3 166.3 22 12 12 nn nn R The fraction of photons emitted is then %94.50594.03258.010881.0 _______________________________________ 14.33 We can write the external quantum efficiency as 21TText where 11 1 RT and where 1R is the reflection coefficient (Fresnel loss), and the factor 2T is the fraction of photons that do not experience total internal reflection. We have 2 12 12 1 nn nn R so that 2 12 12 11 11 nn nn RT which reduces to 2 21 21 1 4 nn nn T Now consider the solid angle from the source point. The surface area described by the solid angle is 2p . The factor 1T is given by 2 2 1 4 R p T From the geometry, we have 2 sin2 2 2 sin CC Rp R p Then the area is 2 sin4 222 CRpA Now 2 sin 4 2 2 2 1 C R p T From a trig identity, we have C C cos1 2 1 2 sin 2 Then CT cos1 2 1 1 The external quantum efficiency is now Cext nn nn TT cos1 2 14 2 21 21 21 or Cext nn nn cos1 2 2 21 21 _______________________________________