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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 11 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ (a) 510544.2 L 6.13653.033653.0 51010.1 L cm 110.0 m Now LL L 110.0 10.0 10.1 L m (b) 510544.2 L 6.13653.053653.0 510326.2 L cm 2326.0 m Now LL L 2326.0 10.0 326.2 L m _______________________________________ 11.5 8 14 10120 1085.89.3 ox ox ox t C 710876.2 F/cm 2 ox ss msFB C Q V 7 1910 10876.2 106.1104 5.0 5223.0FBV V Now fpFB ox SD T V C Q V 2 max We find 3832.0 105.1 104 ln0259.0 10 16 fp V 2/1 1619 14 104106.1 3832.01085.87.114 dTx 510575.1 cm maxSDQ 51619 10575.1104106.1 710008.1 C/cm 2 So 3832.025223.0 10876.2 10008.1 7 7 TV 595.0 V 655.0595.025.1 TGSDS VVsatV V 1619 14 104106.1 1085.87.1122 a s eN 510799.1 cm/V 2/1 (a) a s eN L 2 DSDSfp VsatV satVDSfp (i) 510799.1 L 655.03832.01655.03832.0 61035.7 L cm 0735.0 m (ii) 510799.1 L 655.03832.02655.03832.0 510303.1 L cm 1303.0 m (iii) 510799.1 L 655.03832.04655.03832.0 510205.2 L cm 2205.0 m (b) LL L 2205.0 12.0 84.1L m _______________________________________ 11.6 3758.0 105.1 103 ln0259.0 10 16 fp V 1619 14 103106.1 1085.87.1122 a s eN 510077.2 cm/V 2/1 (a) Ideal, 2 2 TGS n D VV L Wk I 2 4.00.1 80.0 15 2 05.0 16875.0 mA (i) 6.04.00.1 satVDS V 510077.2 L 6.03758.023758.0 510150.1 cm 115.0 m DD I LL L I