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Semiconductor Physics and Devices: Basic Principles, 4
th
 edition Chapter 11 
By D. A. Neamen Problem Solutions 
______________________________________________________________________________________ 
 
(a)  510544.2 L 
  6.13653.033653.0  
 51010.1 L cm 110.0 m 
 Now 
LL
L 110.0
10.0 

 
 10.1 L m 
(b)  510544.2 L 
  6.13653.053653.0  
 510326.2 L cm 2326.0 m 
 Now 
LL
L 2326.0
10.0 

 
 326.2 L m 
_______________________________________ 
 
11.5 
 
  
8
14
10120
1085.89.3







ox
ox
ox
t
C 
 
710876.2  F/cm 2 
 
ox
ss
msFB
C
Q
V

  
 
  
7
1910
10876.2
106.1104
5.0




 
 5223.0FBV V 
 Now 
 
 
fpFB
ox
SD
T V
C
Q
V 2
max


 
 We find 
   3832.0
105.1
104
ln0259.0
10
16










fp V 
 
   
  
2/1
1619
14
104106.1
3832.01085.87.114











dTx 
 
510575.1  cm 
  maxSDQ 
    51619 10575.1104106.1   
 
710008.1  C/cm 2 
 So 
  3832.025223.0
10876.2
10008.1
7
7






TV 
 595.0 V 
   655.0595.025.1  TGSDS VVsatV V 
 
 
 
 
 
  
  1619
14
104106.1
1085.87.1122






a
s
eN
 
 510799.1  cm/V 2/1 
(a) 
a
s
eN
L


2
  DSDSfp VsatV  
  satVDSfp   
 (i)  510799.1 L 
  655.03832.01655.03832.0  
 61035.7 L cm 0735.0 m 
(ii)  510799.1 L 
  655.03832.02655.03832.0  
 
510303.1 L cm 1303.0 m 
(iii)  510799.1 L 
  655.03832.04655.03832.0  
 
510205.2 L cm 2205.0 m 
(b) 
LL
L 2205.0
12.0 

 
 84.1L m 
_______________________________________ 
 
11.6 
   3758.0
105.1
103
ln0259.0
10
16










fp V 
 
  
  1619
14
103106.1
1085.87.1122






a
s
eN
 
 
510077.2  cm/V 2/1 
(a) Ideal, 
  2
2
TGS
n
D VV
L
Wk
I 

 
  2
4.00.1
80.0
15
2
05.0












 
 16875.0 mA 
 (i)   6.04.00.1 satVDS V 
  510077.2 L 
  6.03758.023758.0  
 
510150.1  cm 115.0 m 
 DD I
LL
L
I 








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