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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 12 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ (b) t EB BB V V pp exp0 0 0259.0 615.0 exp1025.2 4 141062.4 cm 3 t EB EE V V nn exp0 0 0259.0 615.0 exp105.4 2 121024.9 cm 3 _______________________________________ 12.11 (a) 16 2102 0 102 105.1 B i B N n n 410125.1 cm 3 Now 151021.00 BB Nn cm 3 t BE B V V n exp0 Then 4 15 10125.1 102 ln0259.0BEV 6709.0 V (b) 17 2102 0 108 105.1 E i E N n p 2108125.2 cm 3 t BE EE V V pp exp0 0 + 0259.0 6709.0 exp108125.2 2 13100.5 cm 3 _______________________________________ 12.12 We have 1exp sinh t BE B B BOB V V L x n dx nd BBB B B L x LL xx L cosh 1 cosh 1 At 0x , 1exp sinh 0 t BE B B B BO x B V V L x L n dx nd 1cosh B B L x At Bxx , 1exp sinh t BE B B B BO xx B V V L x L n dx nd B B B L x cosh Taking the ratio 0 x B xx B dx nd dx nd B 1cosh1exp cosh1exp B B t BE B B t BE L x V V L x V V B B L x cosh 1 (a) For 1.0 B B L x Ratio 9950.0 (b) For 0.1 B B L x Ratio 648.0 (c) For 10 B B L x Ratio 51008.9 _______________________________________ 12.13 In the base of the transistor, we have 0 2 2 BO BB B xn dx xnd D or 0 22 2 B BB L xn dx xnd where BOBB DL