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CsPbBr3 Single Crystal X‑ray Detector with Schottky Barrier for X‑ray Imaging Application Qiang Xu,* Xiang Wang, Hang Zhang, Wenyi Shao, Jing Nie, Yong Guo, Juan Wang, and Xiaoping Ouyang Cite This: ACS Appl. Electron. Mater. 2020, 2, 879−884 Read Online ACCESS Metrics & More Article Recommendations ABSTRACT: A high Z CsPbBr3 halide perovskite with large charge carrier diffusion length was used for radiation detection applications. The high sensitivity X-ray detector is expected to be used for imaging applications. The free-seeding CsPbBr3 single crystals (SCs) were directly grown on ITO glass. We fabricated the Ag/CsPbBr3/ITO sandwich structural X-ray detector with Schottky contact at room temperature. We investigated the X-ray detection and phase-contrast X-ray imaging of the all-inorganic halide perovskite CsPbBr3 SCs. The devices exhibit high performances with low dark current density (∼5− 27 nA/cm2) and high sensitivity (770 μC·Gy−1·cm−2) with an applied voltage of 8 V. An “L”-shape imaging was obtained based on the CsPbBr3 SC X-ray detector array, which makes it a promising application for pixel X-ray imaging techniques. KEYWORDS: CsPbBr3, Schottky detector, X-ray detector, high sensitivity, imaging X-ray detectors have been widely applied in fields such ascomputed tomography,1,2 digital radiography,3 non- destructive testing (NDT),4,5 and X-ray diffraction character- ization.6,7 Compared with traditional semiconductor materials (Si, Ge), low-cost solution-processed perovskite single crystals have been demonstrated for applications in radiation detection.8−12 High sensitivity X(γ)-ray detectors based on organic−inorganic hybrid CH3NH3PbX3 (X = I, Br, Cl) perovskite have been successfully fabricated.13−18 However, the thermal and moisture stability of these organic−inorganic hybrid based devices remain key challenges for commercial applications.19,20 Due to the theoretically strong ionic bonds of all-inorganic perovskite, it has longer term stability compared to that of organic−inorganic perovskite materials.21 In addition, wide direct band gap all-inorganic perovskite semiconductor materials exhibit excellent electrical properties such as high μτ product and large electric resistivity.8,9,22 Furthermore, owing to high Z atomic (Cs, Pb), CsPbBr3 perovskite single crystals show strong X-ray attenuation performance. Therefore, all inorganic CsPbBr3 perovskite single crystals have attracted attention for ionization radiation detection.8,23,24 Stoumpos et al. reported high-quality CsPbBr3 perovskite single crystals (SCs) by using the vertical Bridgman method. Their results showed the μτ product for electrons can be compared with that of cadmium zinc telluride (CZT), and the holes product is about 1 order of magnitude higher than that of CZT,8 which indicated that the photoconductor device enables high-energy radiation detection. Furthermore, Pan and cow- orkers reported a sensitive X-ray detector based on CsPbBr3 perovskite SCs. The sensitivity of the X-ray detector was achieved at 55.684 μC Gy−1 cm−2.22 For these photoconductor detectors, a well-known issue is the high leakage current at high bias. The Schottky barrier is one of the strategies to suppress the leakage current, which also has been demon- strated to be able to improve the charge collection.13 He and coworkers demonstrated that a In/CsPbBr3/Au Schottky structural detector enables collection of high resolution pulse height spectra from 241Am isotope.9 Our previous results indicated that a Schottky structural detector based on CH3NH3PbBr3 single crystals had a high X-ray detection performance (sensitivity of 359 μC Gy−1 cm−2 and response time of 76.2 ± 2.5 μs).13 Herein, we report the fabrication of an X-ray detector with CsPbBr3 SCs, which has been demonstrated with high sensitivity. CsPbBr3 SCs were synthesized using a solution growth method and characterized by X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF), optical transmission, Received: December 20, 2019 Accepted: March 17, 2020 Published: March 17, 2020 Letterpubs.acs.org/acsaelm © 2020 American Chemical Society 879 https://dx.doi.org/10.1021/acsaelm.9b00832 ACS Appl. Electron. Mater. 2020, 2, 879−884 D ow nl oa de d vi a U N IV F E D D O A M A Z O N A S on J an ua ry 2 8, 2 02 2 at 2 0: 17 :4 4 (U T C ). Se e ht tp s: //p ub s. ac s. or g/ sh ar in gg ui de lin es f or o pt io ns o n ho w to le gi tim at el y sh ar e pu bl is he d ar tic le s. https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Qiang+Xu"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Xiang+Wang"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Hang+Zhang"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Wenyi+Shao"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Jing+Nie"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Yong+Guo"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Juan+Wang"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Xiaoping+Ouyang"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/doSearch?field1=Contrib&text1="Xiaoping+Ouyang"&field2=AllField&text2=&publication=&accessType=allContent&Earliest=&ref=pdf https://pubs.acs.org/action/showCitFormats?doi=10.1021/acsaelm.9b00832&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?goto=articleMetrics&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?goto=recommendations&?ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=tgr1&ref=pdf https://pubs.acs.org/toc/aaembp/2/4?ref=pdf https://pubs.acs.org/toc/aaembp/2/4?ref=pdf https://pubs.acs.org/toc/aaembp/2/4?ref=pdf https://pubs.acs.org/toc/aaembp/2/4?ref=pdf pubs.acs.org/acsaelm?ref=pdf https://pubs.acs.org?ref=pdf https://pubs.acs.org?ref=pdf https://dx.doi.org/10.1021/acsaelm.9b00832?ref=pdf https://pubs.acs.org/acsaelm?ref=pdf https://pubs.acs.org/acsaelm?ref=pdf and photoluminescence (PL). A single Ag/CsPbBr3/ITO Schottky device was achieved with low leakage current density in the range of ∼5−27 nA/cm2, a high sensitivity of 770 μC· Gy−1·cm−2, and an applied voltage of 8 V. Furthermore, a highly stable and reproducible 4 × 4 CsPbBr3 SCs Schottky structured X-ray array detector was used for X-ray imaging applications. As shown in Figure 1a, the structural properties of the CsPbBr3 perovskite were investigated using the XRD pattern. The main peaks ascribed to different lattice planes were observed, which is consistent with a previous report.21 The chemical elements of CsPbBr3 perovskite were analyzed by XRF measurements. The peaks located at around 4.28 and 4.62 keV are assigned to Cs Lα1 and Lα2, respectively. The energy peaks at 10.54 and 12.62 keV are derived from Pb Lα1 Figure 1. Structural properties of CsPbBr3 SCs. (a) Powder XRD pattern of CsPbBr3 SCs; the inset shows the photograph of as-grown CsPbBr3 SCs. (b) XRF pattern of optical properties of CsPbBr3 SCs. Figure 2. Optical properties: (a) transmission spectra of CsPbBr3 SCs. The optical bandgap is 2.23 eV as shown in the inset. (b) Room- temperature PL spectra of CsPbBr3 SCs. Figure 3. Detector design. (a) Schematic diagram of the CsPbBr3 X-ray detector device. (b) The dark current density of the Ag/CsPbBr3/ITO detector. ACS Applied Electronic Materials pubs.acs.org/acsaelm Letter https://dx.doi.org/10.1021/acsaelm.9b00832ACS Appl. Electron. Mater. 2020, 2, 879−884 880 https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig1&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig1&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig1&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig1&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig2&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig2&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig2&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig2&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig3&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig3&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig3&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig3&ref=pdf pubs.acs.org/acsaelm?ref=pdf https://dx.doi.org/10.1021/acsaelm.9b00832?ref=pdf and Lβ1, respectively. The remaining two peaks at 11.92 and 13.29 keV are attributed to Kα1 and Kβ1 of Br, respectively. The other peaks are attributed to the elements from air or scattering from background materials. Further, we investigated the optical properties. Figure 2a contains the transmission spectrum of CsPbBr3 SC. The optical band gap was calculated by the transmission spectrum using Tauc’s equation:25 A E( )g 1/2α υ υℏ = ℏ − where α is the optical absorption coefficient, ℏυ is the energy of the incident photon, and A is the energy-independent constant. The optical band gap is around 2.23 eV, which is consistent with the results of the previous reports.21 PL spectra were excited with a 405 nm laser and recorded with a portable spectrometer. A single and strong peak was clearly observed, which is attributed to the band gap emission.26,27 These optical properties of the CsPbBr3 SCs demonstrated that it is a direct interband material.10 According to previous reports, the minimum conduction band and maximum valence band of CsPbBr3 are −3.3 and −5.6 eV, respectively.9 Due to the CsPbBr3 SC being a typical p-type material,9 ohmic and Schottky contacts are formed at the interface between high or low work function metals and the CsPbBr3 SCs, respectively. Therefore, good ohmic and Schottky contacts were obtained at the interface of CsPbBr3 to ITO (4.75 eV) and Ag (4.26 eV), respectively. The schematic of the device is shown in Figure 3a. Figure 3b shows the typical Schottky behavior current−voltage (I−V) curve of the Ag/CsPbBr3 /ITO detector with low dark current density in the range of ∼5−27 nA/cm2 at reverse voltage. A high sensitivity X-ray detector is one of the key components for imaging applications, especially for reducing unexpected harm to a patient.28,29 In Figure 4a, the current density−voltage (J−V) curve of CsPbBr3 SC devices was measured in the dark and under X-ray at various dose rates from 0.13 to 333.69 μGy/s. Under X-ray illumination, the photocurrent exhibits an obvious increase with the applied voltage. The on−off current response of the device under X-ray was also measured (Figure 4b), which means that it is highly reproducible and stable in air. Figure 4c shows the photo- current density as a function of various dose rates and inverse bias voltages. The sensitivity of CsPbBr3 SC devices under different voltages can be calculated by the formula S = Q/ (AX), where S is the sensitivity of the radiation detector, A (mGy) is the radiation dose the crystal receives during the test, X (cm2) is the area of the region receiving radiation, and Q (μC) is the electric charge collected during radiation.30 The corresponding sensitivity of −2, −4, −6, and −8 V is up to 172, 292, 475, and 770 μC·Gy−1·cm−2, respectively. The calculated sensitivity reveals that with the increasing of reverse bias voltages, the sensitivity was improved. Furthermore, we investigated the sensitivity at different reverse biases with an X- ray dose rate of 333.69 μGy/s. Because of the high attenuation of all-inorganic materials, the sensitivity of the device (0.07− Figure 4. X-ray detection. (a) I−V curve of CsPbBr3 SCs devices under various X-ray dose rates (30.53, 163.30, and 333.69 μGy/s). (b) On and off photocurrent density of CsPbBr3 SCs devices with different biases applied (−2, −4, and −6 V) and irradiated by a 45 keV X-ray. (c) Photocurrent response of CsPbBr3 SCs devices at different reverse biases under 40 keV X-ray various dose rates. (d) Sensitivity versus bias of CsPbBr3 SCs devices under a 45 keV X-ray at the dose rate of 333.69 μGy/s. ACS Applied Electronic Materials pubs.acs.org/acsaelm Letter https://dx.doi.org/10.1021/acsaelm.9b00832 ACS Appl. Electron. Mater. 2020, 2, 879−884 881 https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig4&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig4&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig4&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig4&ref=pdf pubs.acs.org/acsaelm?ref=pdf https://dx.doi.org/10.1021/acsaelm.9b00832?ref=pdf 2.86 × 103 μC·Gyair −1·cm−2) was higher than that of the X-ray detector based on the organic−inorganic MAPbBr3 perovskite single crystal (80 μC·Gy−1·cm−2).16 All of these results show that the X-ray detector based on CsPbBr3 SCs can be used for X-ray imaging. A single high quality CsPbBr3 SC with a diameter of 4 × 4 mm was selected to fabricate a Schottky structured detector. Then, an imaging pad with a 4 × 4 array was obtained (Figure 5a). The pixel size of the single device was the spatial resolution of X-ray imaging. To ensure stability, the electrical current signal of each device was collected at 100 s (Figure 5b). The dark current density value was around −10 nA/cm2. The typical current response was about −223 nA/cm2 under the 40 kV X-ray exposure. Then, we put an L-shaped copper wire on the top of devices. We collected all current responses from all 4 × 4 devices. After analysis of the current from all of these 4 × 4 devices, we rebuilt an X-ray image (Figure 5c). Due to the large diameter of the crystals, the rebuilt image is indistinct. High-quality free-seeding CsPbBr3 SCs were grown on the ITO substrate using a solution-processed method at low temperature. A low function metal, Ag, was deposited on the surface of crystal to form a Schottky contact. Then, an X-ray detector with a Ag/CsPbBr3/ITO Schottky structure was obtained. The device exhibited high on−off photocurrent response, and the sensitivity increased with the applied bias from 72 μC·Gy−1·cm−2 at 2 V to 2.86 × 103 μC·Gy−1·cm−2 at 10 V. The high performance of the detector is mainly attributed to the existence of a Schottky barrier at the interface of the Ag and CsPbBr3 SCs. Further, the high stability and current response of the 4 × 4 array detector allowed its use for X-ray imaging. The results indicate that the CsPbBr3 SCs can be used for high spatial resolution X-ray imaging applications. Materials. Lead bromide crystalline powder (PbBr2, 99.99%), cesium bromide crystalline powder (CsBr, 99.999%, Aladdin Reagent Co), dimethyl sulfoxide (DMSO, anhydrous, ≥99.0%, Aladdin Reagent Co), and cyclohexane (C6H12, anhydrous, AR, 99.5%, Aladdin Reagent Co) were used in addition to N,N-dimethylforma- mide (DMF, anhydrous, 99.5%, Nanjing Chemical Reagent Co). All of these raw materials are commercial products. CsPbBr3 SCs Were Grown Using a Solution Processed Method. CsBr (1.5 mol) and PbBr2 (1.5 mol) were dissolved in DMSO (20 mL), DMF (20 mL), and C6H12 (10 mL) and stirred at 50 °C for 24 h. Then, a 1.5 μm pore size PTFE filter was used to filter this precursor solution. After a 1 × 1 cm ITO glass was placed under the bottom of the solution, the temperature of the precursor solution was gradually increased to 65 °C at 5 °C/h. After the solution was kept under these conditions for several days, CsPbBr3 perovskite single crystals were obtained on the surface of the ITO glass. Device Fabrication. The high performance X-ray detector was manufactured by selecting high quality CsPbBr3 SCs. The ITOand commercial silver conductive epoxy as electrode contact were established on both sides of the crystal. The Figure 5. X-ray imaging method. (a) Schematic of X-ray imaging with the CsPbBr3 SCs array detector. (b) Photocurrent as a function of time before and after the sample was placed on the surface. (c) X-ray image of the L-shaped image procured by the detector array. ACS Applied Electronic Materials pubs.acs.org/acsaelm Letter https://dx.doi.org/10.1021/acsaelm.9b00832 ACS Appl. Electron. Mater. 2020, 2, 879−884 882 https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig5&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig5&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig5&ref=pdf https://pubs.acs.org/doi/10.1021/acsaelm.9b00832?fig=fig5&ref=pdf pubs.acs.org/acsaelm?ref=pdf https://dx.doi.org/10.1021/acsaelm.9b00832?ref=pdf copper wire for connection to the probe was fixed with insulating tape. After that, a 4 × 4 array detector was fabricated. Characterization. The structural properties of crystals were characterized by XRD of CsPbBr3 powder. The powder XRD pattern was performed using an X-ray diffractometer (JD3745N Rigaku Ultima IV diffractometer) equipped with a Cu Kα X-ray tube (λ = 0.15406 nm). The chemical elements of CsPbBr3 single crystals were investigated by XRF. The optical transmission spectrum was recorded using a Shimadzu UV 2550 spectrophotometer. The PL spectra were collected using a spectrometer (PG-2000-Pro) (CNI. Model MPL-F- 405 nm, China) under 405 nm excitation at room temperature. The I−V characteristics of the X-ray detector were measured using a Keithley 2450 source meter. The X-ray imaging performances were characterized using a homemade x−y platform. A portable X-ray tube with a Ag target (Mini-X Amptek. inc) that operated at various voltages to generate X- ray beams was used. ■ AUTHOR INFORMATION Corresponding Author Qiang Xu − Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China; orcid.org/0000-0002-4720-7477; Email: xuqiangxmu@nuaa.edu.cn Authors Xiang Wang − Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China Hang Zhang − Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China Wenyi Shao − Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China Jing Nie − Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China Yong Guo − Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China Juan Wang − Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China Xiaoping Ouyang − Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China; Shanxi Engineering Research Center of Controllable Neutron Source, School of Science, Xijing University, Xi’an 710123, China; Northwest Institute of Nuclear Technology, Xi’an 710024, China Complete contact information is available at: https://pubs.acs.org/10.1021/acsaelm.9b00832 Notes The authors declare no competing financial interest. ■ ACKNOWLEDGMENTS This work was funded by the National Natural Science Foundation of China (Grants 11705090, 11875166, and 11435010). This work was also supported by the Fundamental Research Funds for the Central Universities (Grant NT2019018). ■ REFERENCES (1) Overdick, M.; Baumer, C.; Engel, K. J.; Fink, J.; Herrmann, C.; Kruger, H.; Simon, M.; Steadman, R.; Zeitler, G. Status of direct conversion detectors for medical imaging with X-rays. IEEE Trans. Nucl. Sci. 2009, 56 (4), 1800−1809. (2) Persson, M.; Bujila, R.; Nowik, P.; Andersson, H.; Kull, L.; Andersson, J.; Bornefalk, H.; Danielsson, M. Upper limits of the photon fluence rate on CT detectors: Case study on a commercial scanner. Med. Phys. 2016, 43 (7), 4398−4411. (3) Yaffe, M.; Rowlands, J. X-ray detectors for digital radiography. Phys. Med. Biol. 1997, 42 (1), 1. (4) Kotwaliwale, N.; Singh, K.; Kalne, A.; Jha, S. N.; Seth, N.; Kar, A. X-ray imaging methods for internal quality evaluation of agricultural produce. J. Food Sci. Technol. 2014, 51 (1), 1−15. (5) Estre, N.; Eck, D.; Pettier, J.-L.; Payan, E.; Roure, C.; Simon, E. 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