Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_582

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Step of 6 5.010P (a) Oxide capacitance is Permittivity of the silicon dioxide is F/m Oxide thickness is 6 nm 3.45x10⁻¹¹ F/m = m = 5.75x10⁻³ = 5.75 Thus, the Oxide capacitance is 5.75 Step of 6 Mobility of electron is 460 Value of is Substitute and in = (460 = = = 264.5 Thus, the value of is 264.5 Step of 6 (b) Aspect ratio W is 20 µm L 0.25 µm DC Drain current flowing through transistor when the transistor is in saturation region is 0.5 mA DC Drain current for transistor operated in saturation region 2 W L Thus, the over drive voltage is 0.22 V V Step of 6 The relation between gate source voltage over drive voltage and threshold voltage is = = 0.72 V Gate source voltage is 0.72 V NMOS transistor operated in the saturation region, condition for minimum drain sourse voltage is = Thus, the minimum drain source voltage 0.22 V V Step of 6 (c) 1 Linear resistance for over drive voltage is NMOS acts as a resistor having linear resistance value equal to 100 1 100 0.25 = (264.5 = V 5.29x10⁻⁷ = 0.472 V Thus, the over drive voltage when the device operates as a resistor is 0.472 V V Step of 6 The relation between gate source voltage over drive voltage and threshold voltage is = 0.972 V Thus, the gate source voltage when the device operates as a resistor is 0.972 V V