Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_575

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Step 5.007E Refer Figure E5.7 in the textbook for (a) From the circuit, the source voltage The condition for transistor conduction Therefore, range of VG for which transistor conducts Step (b) Condition for triode region Therefore, the range of in terms Step (c) Condition for saturation is Therefore, the range of in terms of VG is Step (d) The equation for drain current is, Substitute for 10 for W L and 75 for the 75x10 75 (30)(10) Therefore, the overdrive voltage =0.5V Step Given MOSFET is p- channel type, and have Step 11 Simplify =-1.5+5 =3.5V Therefore, the gate voltage is Step The condition saturation Substitute for in the equation Therefore, the range drain voltage Step (e) The output resistance of the device in saturation region is, =0.67 MQ Therefore, the output resistance of the device in saturation =0.67MQ Step (f) The Drain source voltage is, =3-5 =2V The Overdrive voltage Since the transistor operating in triode region and equation for drain current is, Therefore, the drain current VD =+3V - Step The Drain source voltage is, =0-5 =-5V Since the transistor operating in triode region and equation for drain Therefore, the drain current at =0V Step 11 of 11 Apparent output resistance of the device is 5-2 4.5x10 the apparent output resistance saturation =0.67MQ Thus, the output resistance obtained part (e) same as the output resistance obtained in this