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Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_1736

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Step 1 of 2 16.004E Refer to Figure 15.12 in the textbook for the CMOS SRAM memory cell. The condition for the ratio of to is, Step 2 of 2 Substitute 1.5 for , 0.5 V for and 1.8 V for in the equation. ≤2.5 VI Therefore, the maximum allowable W/L for the access transistors of SRAM cell is

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