Prévia do material em texto
Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 13 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ (c) GSbipODS VVVsatV (i) 0860.0705.3 satVDS 845.2 V (ii) 0.1860.0705.3 satVDS 845.1 V _______________________________________ 13.5 (a) 2 2 2 2 ea V N Nea V pOs a s a pO 2419 14 1065.0106.1 75.21085.81.132 aN 1510433.9 cm 3 (b) 26 1815 108.1 1010433.9 ln0259.0biV 280.1 V 280.175.2 bipOp VVV 47.1 V (c) 22 65.015.0 hha 50.02 h m 2/1 2 2 a GSSDbis eN VVV h 241050.0 1519 14 10433.9106.1 028.11085.81.132 GSV GSV 28.1105363.1105.2 99 347.0 GSV V (d) 2/1 2 2 a GSSDbis eN VVV h 241065.0 1519 14 10433.9106.1 28.11085.81.132 SDV SDV 28.1105363.11065.0 924 47.1 SDV V _______________________________________ 13.6 (a) 2 2 ea V N pOs a 2419 14 1065.0106.1 75.21085.87.112 or aN 1510425.8 cm 3 (b) 210 1815 105.1 1010425.8 ln0259.0biV 8095.0 V 8095.075.2 bipOp VVV 9405.1 V (c) 22 65.015.0 hha 50.02 h m 2/1 2 2 a GSSDbis eN VVV h 241050.0 1519 14 10425.8106.1 08095.01085.87.112 GSV GSV 8095.010536.1105.2 99 8178.0 GSV V (d) 2/1 2 2 a GSSDbis eN VVV h 241065.0 1519 14 10425.8106.1 8095.01085.87.112 SDV SDV 8095.010536.11065.0 924 94.1 SDV V _______________________________________ 13.7 (a) 2 ln i da tbi n NN VV 210 1816 105.1 103102 ln0259.0 860.0 V bipOp VVV 86.3860.00.3 pOpO VV V Now 2/1 2 a pOs eN V a 2/1 1619 14 102106.1 86.31085.87.112 5100.5 cm 50.0 m