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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 13 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ (b) 86.3pOV V (c) GSbipOSD VVVsatV (i) 0.386.086.3 satVSD V (ii) 5.15.186.086.3 satVSD V _______________________________________ 13.8 (a) 2 ln i da tbi n NN VV 26 1816 108.1 103102 ln0259.0 328.1 V bipOp VVV 328.4328.10.3 pOpO VV V 2/1 2 a pOs eN V a 2/1 1619 14 102106.1 328.41085.81.132 51060.5 cm 560.0 m (b) 328.4pOV V (c) GSbipOSD VVVsatV (i) 0.30328.1328.4 satVSD V (ii) 5.15.1328.1328.4 satVSD V _______________________________________ 13.9 (a) GSbipODS VVVsatV Now 210 1816 105.1 104104 ln0259.0biV 886.0 V We find 886.5886.05 pOpO VV V 2/1 2 a pOs eN V a 2/1 1619 14 104106.1 886.51085.87.112 51036.4 cm 436.0 m (b) (i) 886.5pOV V (ii) 0.5886.5886.0 pObip VVV V _______________________________________ 13.10 (a) 26 1815 108.1 10105 ln0259.0biV 264.1 V GSbipOSD VVVsatV 0.1264.15.3 pOV 764.5 pOV V 2/1 2 a pOs eN V a 2/1 1519 14 105106.1 764.51085.81.132 410293.1 cm 293.1 m (b) (i) 764.5pOV V (ii) 264.1764.5 bipOp VVV 5.4 V _______________________________________ 13.11 (a) L WaeN I s dn P 6 32 1 14 21619 1085.87.116 10106.11000 4 344 1020 105.010400 or 03.11 PI mA (b) s d PO Nea V 2 2 14 162419 1085.87.112 10105.0106.1 or 93.1POV V Also 874.0 105.1 1010 ln0259.0 210 1619 biV V Now GSbiPODS VVVsatV GSV 874.093.1 or GSDS VsatV 056.1