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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 13 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ Also s d PO Nea V 2 2 14 162419 1085.87.112 104105.0106.1 or 726.7POV V Then 726.7 8915.0 3136.121 satI D 726.7 8915.0 3 2 1 or 05.91 satI D mA _______________________________________ 13.30 (a) If 1L m, then saturation will occur when 110110 44 LVDS V We find 2/1 2 2 d GSDSbis sat eN VVV hh We have 8915.0biV V and for 0GSV , we obtain 2/1 1619 14 104106.1 18915.01085.87.112 sath or 410247.0 sath cm 247.0 m Then WhaeNsatI satsatdD 1 71619 10104106.1 44 103010247.050.0 or 86.41 satI D mA If velocity saturation did not occur, then from the previous problem, we would have 1.18 1 2 05.91 satI D mA (b) If velocity saturation occurs, then the relation LsatI D 11 does not apply. _______________________________________ 13.31 (a) 73 1041058000 n cm/s Then 12 7 4 105 104 102 L td s or 5dt ps (b) Assume 710 sat cm/s Then 11 7 4 102 10 102 sat d L t s or 20dt ps _______________________________________ 13.32 (a) 74 10101000 n cm/s Then 11 7 4 102 10 102 L td s or 20dt ps (b) For 710 sat cm/s 11 7 4 102 10 102 sat d L t s or 20dt ps _______________________________________ 13.33 The reverse-bias current is dominated by the generation current. We have PObiP VVV We find 210 1618 105.1 103105 ln0259.0biV or 884.0biV V Also s d PO Nea V 2 2 14 162419 1085.87.112 103103.0106.1