Prévia do material em texto
Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 7 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 19 14 106.1 7305.01085.87.112 2/1 161616 16 102102 1 102 102 or 410154.0 nx cm 154.0 m By symmetry 410154.0 px cm 154.0 m Now s nd xeN max 14 41619 1085.87.11 101537.0102106.1 or 4 max 1075.4 V/cm _______________________________________ 7.6 (b) kT EE nN FiF id exp 0259.0 365.0 exp105.1 10 or dN 161098.1 cm 3 kT EE nN FFi ia exp 0259.0 330.0 exp105.1 10 or aN 151012.5 cm 3 (c) 210 1615 105.1 1098.11012.5 ln0259.0biV 695.0 V _______________________________________ 7.7 200 K; 017267.0kT ; 38.1in cm 3 300 K; 0259.0kT ; 6108.1 in cm 3 400 K; 034533.0kT ; 91028.3 in cm 3 For 200 K; 2 1615 38.1 104102 ln017267.0biV 257.1 V For 300 K; 26 1615 108.1 104102 ln0259.0biV 157.1 V For 400 K; 29 1615 1028.3 104102 ln034533.0biV 023.1 V _______________________________________ 7.8 pnn xxWx 25.025.0 pn xx 25.075.0 3 n p x x apdn NxNx 3 n p a d x x N N So ad NN 3 (a) 210105.1 ln0259.0 da bi NN V 210 2 105.1 3 ln0259.0710.0 aN or 0259.0 710.0 exp105.13 2102 aN which yields 1510766.7 aN cm 3 161033.2 dN cm 3 2/1 12 dad abis n NNN N e V x 19 14 106.1 710.01085.87.112 2/1 1510766.74 1 3 1 61093.9 nx cm or 0993.0nx m 19 14 106.1 710.01085.87.112 px 2/1 1510766.74 1 1 3 510979.2 cm or 2979.0px m