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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 7 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ (i) For 0RV , 19 14 106.1 6767.01085.87.112 W 2/1 1516 1516 10105 10105 510452.9 cm or 9452.0W m (ii) For 5RV V, 19 14 106.1 56767.01085.87.112 W 2/1 1516 1516 10105 10105 410738.2 cm or 738.2W m (c) W VV Rbi 2 max (i)For 0RV , 4 4max 1043.1 109452.0 6767.02 V/cm (ii)For 5RV V, 4 4max 1015.4 10738.2 56767.02 V/cm _______________________________________ 7.17 (a) 210 1617 105.1 104102 ln0259.0biV 8081.0 V (b) 2/1 12 dad aRbis n NNN N e VV x 19 14 106.1 5.28081.01085.87.112 2/1 161716 17 104102 1 104 102 4102987.0 cm or 2987.0nx m 2/1 12 daa dRbis p NNN N e VV x 19 14 106.1 5.28081.01085.87.112 2/1 161717 16 104102 1 102 104 61097.5 cm or 0597.0px m 2/1 2 da daRbis NN NN e VV W 19 14 106.1 5.28081.01085.87.112 2/1 1617 1617 104102 104102 4103584.0 cm or 3584.0W m Also 3584.0 pn xxW m (c) 4max 103584.0 5.28081.022 W VV Rbi 51085.1 V/cm (d) 2/1 2 daRbi das NNVV NNe AC 5.28081.02 1085.87.11106.1 102 1419 4 2/1 1617 1617 104102 104102 121078.5 F or 78.5C pF _______________________________________ 7.18 (a) 2 ln i da tbi n NN VV 2 280 ln i d t n N V We find t bi id V V nN exp80 22 0259.0 740.0 exp105.1 210 3210762.5