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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 7 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 44 2 10210726.70 d or 45.152 V By symmetry, the potential difference across the p-region space-charge region is also 3.863 V. The total reverse-bias voltage is then 2.2345.15863.32 RV V _______________________________________ 7.35 (a) B crits B eN V 2 2 or 40106.12 1041085.87.11 2 19 25142 B crits B eV N Then 1610294.1 aB NN cm 3 (b) 20106.12 1041085.87.11 19 2514 BN Or 161059.2 aB NN cm 3 _______________________________________ 7.36 80106.12 1041085.87.11 2 19 25142 B crits a eV N 151047.6 cm 3 _______________________________________ 7.37 (a) For 1610dN cm 3 , from Figure 7.15, 75BV V (b) For 1510dN cm 3 , 450BV V _______________________________________ 7.38 (a) From Equation (7.36), 2/1 max 2 da da s Rbi NN NNVVe Set critmax and BR VV 210 1616 105.1 102102 ln0259.0biV 7305.0 V Then 14 19 5 1085.87.11 106.12 104 Rbi VV 2/1 1616 1616 102102 102102 77.51 Bbi VV V So 04.51BV V (b) 210 1515 105.1 105105 ln0259.0biV 6587.0 V Then 14 19 5 1085.87.11 106.12 104 Rbi VV 2/1 1515 1515 105105 105105 1.207 Rbi VV So 206RV V _______________________________________ 7.39 For a silicon np junction with 15105dN cm 3 and 100BV V, then, neglecting biV we have 2/1 2 d Bs n eN V x 2/1 1519 14 105106.1 1001085.87.112 or 41009.5min nx cm 09.5 m _______________________________________ 7.40 We find 933.0 105.1 1010 ln0259.0 210 1818 biV V Now s nd xeN max so