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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 13 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 13.17 n-channel MESFET - GaAs (a) We want 10.0TV V Then POnBnPObiT VVVV so s d d c tT Nea N N VV 2 ln89.010.0 2 which can be written as dN 17107.4 ln0259.0 10.089.0 1085.81.132 1035.0106.1 14 2419 dN or dN 17107.4 ln0259.0 79.010453.8 17 dN By trial and error, 15101.8 dN cm 3 (b) At 400T K 54.1 300 400 300 400 2/3 c c N N Then 54.1107.4400 17cN 171024.7 cm 3 Also 03453.0 300 400 0259.0 tV Then 15 17 101.8 1024.7 ln03453.089.0TV 1517 101.810453.8 which becomes 050.0TV V _______________________________________ 13.18 (a) 2/1 2 d pOs eN V a 2/1 1619 14 102106.1 5.11085.81.132 51030.3 cm 330.0 m (b) pObiT VVV We find 16 17 102 107.4 ln0259.0ln d c tn N N V 0818.0 V 788.00818.087.0 nBnbiV V Then 712.05.1788.0 TV V (c) 2/1 2 2 d GSDSbis eN VVV h 2/1 1619 14 102106.1 1085.81.132 GSDSbi VVV (i) 2/110 2 4.00788.010246.7 h 510677.1 cm 1677.0 m 1623.01677.0330.02 ha m (ii) 2/110 2 4.00.1788.010246.7 h 510171.3 cm 3171.0 m 0129.03171.0330.02 ha m (iii) 2/110 2 4.00.4788.010246.7 h 51064.5 cm 564.0 m 022 haah _______________________________________ 13.19 (a) s d pO Nea V 2 2 14 152419 1085.81.132 1051050.0106.1 8626.0 V We find 15 17 105 107.4 ln0259.0n 1177.0 V 1177.087.0 nBnbiV 7523.0 V 8626.07523.0 pObiT VVV 1103.0 V