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O Transistor IGBT aplicado em eletronica de potencia

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the IGBT dv/dt in hard 
switching mode”; EPE’95, September 19-21, 1995, Sevilla - 
Spain; Vol. 1, 6th, pp. 234-239. 
[25] SIEMENS; “BSM100GB120DN2 IGBT MODULE”, Catágogo, 
1993; pp. 1-9. 
[26] CASANELLAS, F.; “Losses in PWM inverters using IGBTs”; IEE 
Proc. - Electronics Power Applications; September 1994; Vol.141, 
No.5, pp. 235-239. 
[27] BARBI, I.; PERÍN, A.; BASCOPÉ, R.; ”Cálculo térmico para 
inversor monofásico”; Relatório Interno - INEP/UFSC; 1995. 
[28] KELLER, Ch.; TADROS, Y.; “Are paralleled IGBT modules or 
paralleled IGBT inverters the better choice”; EPE’93, September 
13-16, 1993, Brighton; Vol. 5, pp. 1-6. 
[29] DAPKUS, Donald A.; “Parallel operation of IGBTs”; PCIM’94, 
September 17-22, 1994, Dallas/Texas; Vol. 29, pp. 175-183. 
[30] HARRIS. Application Note No AN9319, September 1993; pp. 8-83 
up to 8-87. 
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INEP - Instituto de Eletrônica de Potência - EEL - CTC - UFSC 
O Interruptor IGBT 
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[31] REINMUTH, K.; LORENZ, L.; "A new generation of IGBTs and 
concepts for their protection"; PCIM'94, June 28-30, 1994; 
Nürnber-Germany ; Vol. 28, pp. 139- 147. 
[32] MIYASAKA, Tadashi; SHYUJI, Miyashita; "Protection of IGBT 
modules in inverter circuits"; PCIM'91, September 22-27, 1991, 
Universal City - California; pp. 211-216. 
[33] SHINICHI, Kobayashi; et. al. ; "Overcurrent protection for power 
transistor modules in inverters"; PCI'88, June 6-9, 1988, Munich 
West - Germany; pp. 17-13. 
[34] RINEHART, Larry; "Designing short circuit protection into PWM 
transistor inverter"; PCIM'90, October 21-26, 1990, Philadelphia; 
Vol. 21, pp. 61-66. 
[35] DUONG, S.; RAËL, S.; SCHAEFFER, C.; DE PALMA, J. F.; 
"Short-circuit behaviour for PT and NPT IGBT devices - 
protection against explosion of the case by fuses"; EPE'95, 
September 19-21, 1995, Sevilla-Spain; Vol. 1, pp. 249-254. 
[36] LETOR, Romeo; ANICETO, Candeloro; "Short circuit behaviour 
of IGBTs correlated to the intrinsic device structure and on the 
application circuits "; IAS'92, October 4-9, 1992; Vol. 1, pp. 1179-
1185. 
[37] CHOKHAWALA, Rahul S.; CATT, Jamie; KIRALY, Laszlo; 
"A discussion on IGBT short-circuit behaviour and fault protection 
schemes"; Transaction on Industry Applications, March/April 
1995; Vol.31, No. 2, pp. 256-263. 
[38] KONRAD, Sven; "New driver stage for Voltage-controlled 
components with integrated short-circuit protection"; EPE Journal, 
September 1994; Vol. 4, No. 3, pp. 9-13. 
[39] BROWN, D.; HAMMERTON, C. J.; HOULDSWORTH, J.; 
"New concepts in protected power semicondutors"; HFPC'92, 
May 3-7, 1992, San Diego - California; pp. 156-166. 
[40] KOHNO, Y.; et. al; "A new inteligent IGBT with over-current 
protection"; IPEC'95, Yokohama - Japan, 1995; pp. 931-936. 
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INEP - Instituto de Eletrônica de Potência - EEL - CTC - UFSC 
O Interruptor IGBT 
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[41] KRAUS, R.; REDDIG, M.; KOFFMANN, K. ; "The short-circuit 
behaviour of IGBTs based on different technologies"; EPE'95, 
September 19-21, 1995, Sevilla-Spain; Vol. 1, pp. 157-161. 
[42] DE PALMA, J. F.; MULERTT, C.; DUONG, S. ; SCHAEFFER, 
C.; "IGBT Characterisation for their protection by fuses"; 
IPEC'95, Yokohama-Japan, 1995; pp. 925 - 930. 
[43] ZHANG, Y.; SOBHANI, Saed; CHOKHAWALA, Rahul; 
"Snubber considerations for IGBT applications"; IGBT Designer’s 
Manual - International Rectifier Data Sheet, 1995; pp. E-135 up to 
E-154. 
[44] FUJI ELECTRIC; "New 3rd - Generation Fuji IGBT Modules"; 
Application Manual, 1994. 
[45] GOURAB, Majumdar; et. al; "Intelligent power module rating 
reached 600A, 1200V"; PCIM'94, Nürnberg-Germany, June 28-30, 
1994; Vol. 28, pp. 181 - 187. 
[46] BRAGA, Henrique; BARBI, Ivo; “A new technique for parallel 
connection of commutation cells: analysis, design and 
experimentation”; PESC’95, June 18-22, 1995, Atlanta; Vol. 1, 
pp.81 - 87. 
[47] - BISWAS, Sujit K.; BASAK, Biswarup; RAJASHEKARA, 
Kaushik S. ; “Gate drive methods for IGBTs in bridge 
configurations”; IAS’94; 1994; pp. 1310-1316. 
[48] - CHOKHAWALA, Rahul S.; CATT, Jamie; PELLY, Brian R.; 
“Gate drive considerations for IGBT modules”; IAS’95, 
Transactions on Industry Applications, May/June 1995; vol. 31, 
No 3; pp. 603-611. 
[49] - SANTOS, A.; “Driving high current IGBTs in high-power 
circuits”; COBEP’95, 3rd Brazilian Power Electronics 
Conference, December 4 to 7, São Paulo-Brazil, 1995; pp. 
621-625. 
[50] - BARBI, Ivo; “Projeto de fontes chaveadas”; Publicação Interna, 
UFSC - Brasil; Florianópolis-1990; pp. 31-58. 
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INEP - Instituto de Eletrônica de Potência - EEL - CTC - UFSC 
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[51] - BARBI, Ivo; ANDRADE, Elias ;“Projeto e implemetação de um 
inversor para cargas não lineares”; Relatório Interno, UFSC - 
Brasil, Março 1996. 
 
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INEP - Instituto de Eletrônica de Potência - EEL - CTC - UFSC

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