Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_563

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Step 1 of 2 5.001E The permittivity of silicon dioxide is, = 3.45 10⁻¹¹ F/m The oxide capacitance is, Substitute 3.45 10⁻¹¹ F/m for and 4 nm for in the equation. = 0.8625 10⁻² The Trans conductance parameter is, = Substitute 450 for µₙ and 0.8625 X 10⁻² for in the equation. Hence, the value of process transconductance parameter is, Step 2 of 2 The relation for the linear resistance is, 1 = Substitute 1 kΩ for , 450 for µₙ 0.8625 X 10⁻² for 0.18 µm for L. 1V for , and 0.5 V for V, in the equation. 1 = W 1 = Hence, value of W is,