Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_433

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Step 1 of 3 3.024P The equation of the built in voltage V₀ of a junction is, Here, the acceptor concentration, N, = 10" donor concentration, and the intrinsic concentration, n, = Note that the thermal equivalent voltage is 26 mV. Substitute for N, for for n, and 26 mV for Step 2 of 3 Consider that for an intrinsic silicon the permittivity, Substitute 8.854x10⁻¹⁴ F/cm for permittivity of free space F/cm Calculate the capacitance - Here, q is the charge of an electron, and A is the cross sectional area. Substitute 1.036x10⁻¹² F/cm for 1.6x10⁻¹⁹ C for q 0.757 V for for N, , for , and 100 for F Therefore, the value of the capacitance is Step 3 of 3 Calculate the depletion capacitance c, for the junction. Here, is the capacitance at zero reverse bias, is the applied reverse bias voltage, V₀ is the built in voltage for the junction, and m is the grading coefficient. Substitute 0.0315x10⁻¹² F for , 3 V for 0.757 V for and 1/3 for m. 0.0315x10⁻¹² = 1.7 Therefore, the depletion capacitance of the junction is F