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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 6 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 6.23 Plot _______________________________________ 6.24 (a) From Equation (6.55) 0 2 2 nO onn n dx nd dx nd D or 0 22 2 n o n n L n dx nd Ddx nd We have that e kTD n n so we can define LekTD o o n n 1 Then we can write 0 1 22 2 nL n dx nd Ldx nd The solution is of the form xnn exp0 where 0 Then n dx nd and n dx nd 2 2 2 Substituting into the differential equation, we find 0 1 2 2 nL n n L n or 0 1 2 2 nLL which yields 1 22 1 2 L L L L L nn n We may note that if 0 o , then L and nL 1 (b) nOnn DL where e kT D nn so 1.310259.01200 nD cm 2 /s and 47 104.391051.31 nL cm or 4.39nL m For 12o V/cm, then 4106.21 12 0259.0 o ekT L cm and 21075.5 cm 1 (c) Force on the electrons due to the electric field is in the negative x-direction. Therefore, the effective diffusion of the electrons is reduced and the concentration drops off faster with the applied electric field. _______________________________________ 6.25 p-type so the minority carriers are electrons and t nn gnnD nO nn 2 Uniform illumination means that 02 nn . For nO , we are left with g dt nd which gives 1Ctgn For 0t , 00 1 Cn Then tGn o for Tt 0 For Tt , 0g so that 0 dt nd And TGn o (no recombination) _______________________________________ 6.26 n-type, so minority carriers are holes and t pp gppD pO pp 2 We have pO , 0 , and 0 t p (steady-state). Then we have 0 2 2 g dx pd D p or pD g dx pd 2 2 For LxL , oGg = constant. Then 1Cx D G dx pd p o