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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 8 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ Then 1174 101010 ss AJI mA Case 4: 0259.0 72.0 exp 20.1 exp t a s V V I I 1210014.1 sI mA 8 12 102 10014.1 s s J I A 51007.5 cm 2 _______________________________________ 8.11 (a) p nop n pon n pon pn n L peD L neD L neD JJ J d i po p a i no n a i no n N nD N nD N nD 22 2 d a pon nop N N D D 1 1 90.0 1 90.0 1 d a pon nop N N D D 1 90.0 1 nop pon d a D D N N 1111.0 10510 1025 7 7 07857.0 d a N N or 73.12 a d N N (b) From part (a), 1 20.0 1 nop pon d a D D N N 4 10510 1025 7 7 828.2 d a N N or 354.0 a d N N _______________________________________ 8.12 The cross-sectional area is 4 3 105 20 1010 J I A cm 2 We have 0259.0 65.0 exp20exp S t D S J V V JJ which yields 1010522.2 SJ A/cm 2 We can write pO p dnO n a iS D N D N enJ 112 We want 10.0 11 1 pO p dnO n a nO n a D N D N D N or 77 7 105 101 105 251 105 251 da a NN N = 10.0 10472.410071.7 10071.7 33 3 d a N N which yields 23.14 d a N N Now 2101910 105.1106.110522.2 SJ 77 105 101 105 25 23.14 1 dd NN We find 141009.7 dN cm 3 and 161001.1 aN cm 3 _______________________________________ 8.13 Plot _______________________________________