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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 8 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 17 421019 10 1 10105.1106.1 t D V V exp 10 29.8 7 or t D p V V I exp10278.3 16 (A) Then 0741.0 10426.4 10278.3 15 16 S pp J J I I _______________________________________ 8.16 (a) d i po p p nop sp N nD eA L peD AI 2 16 210 8 419 105.1 105.1 108 10 105106.1 1410342.1 spI A (b) a i no n n pon sn N nD eA L neD AI 2 16 210 7 419 105 105.1 102 25 105106.1 1510025.4 snI A (c) 210 1616 105.1 105.1105 ln0259.0biV 746826.0 V 59746.0746826.08.08.0 bia VV V t a d i t a nonn V V N n V V pxp expexp 2 0259.0 59746.0 exp 105.1 105.1 16 210 141056.1 cm 3 (d) t a snnnpn V V IxIxI exp 0259.0 59746.0 exp10025.4 15 5101981.4 A (e) t a spnp V V IxI exp 0259.0 59746.0 exp10342.1 14 4103997.1 A pnTotal III 45 103997.1101981.4 410820.1 A Now p p nppnp L L xILxI 21 exp 2 1 2 1 exp103997.1 4 5104896.8 A Then pnpTotalpnn LxIILxI 2 1 2 1 54 104896.810820.1 510710.9 A _______________________________________ 8.17 (a) The excess hole concentration is given by nonn ppp pt a no L x V V p exp1exp We find 4 16 2102 1025.2 10 105.1 d i no N n p cm 3 and 61001.08 pOpp DL 410828.2 cm 828.2 m Then 1 0259.0 610.0 exp1025.2 4 np 410828.2 exp x or 4 14 10828.2 exp1081.3 x pn cm 3