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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol ST 2N2222 ST 2N2222A Unit Collector Base Voltage VCBO 60 75 V Collector Emitter Voltage VCEO 30 40 V Emitter Base Voltage VEBO 5 6 V Collector Current IC 600 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 OC Storage Temperature Range TS -55 to +150 OC G S P FORM A IS AVAILABLE 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at IC=0.1mA, VCE=10V at IC=1mA, VCE=10V at IC=10mA, VCE=10V at IC=150mA, VCE=10V at IC=500mA, VCE=10V ST 2N2222 ST 2N2222A hFE hFE hFE hFE hFE hFE 35 50 75 100 30 40 - - - - - - - - - 300 - - - - - - - - Collector Cutoff Current at VCB=50V at VCB=60V ST 2N2222 ST 2N2222A ICBO ICBO - - - - 0.01 0.01 µA µA Collector Base Breakdown Voltage at IC=10µA ST 2N2222 ST V(BR)CBO V(BR)CBO 60 75 - - - - V V Collector Emitter Breakdown Voltage at IC=10mA ST 2N2222 ST V(BR)CEO V(BR)CEO 30 40 - - - - V V Emitter Base Breakdown Voltage at IE=10µA ST 2N2222 ST V(BR)EBO V(BR)EBO 5 6 - - - - V V Collector Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA ST 2N2222 ST 2N2222A ST 2N2222 VCE(sat) VCE(sat) VCE(sat) VCE(sat) - - - - - - - - 0.4 0.3 1.6 1 V V V V Base Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA ST 2N2222 ST 2N2222A ST 2N2222 VBE(sat) VBE(sat) VBE(sat) VBE(sat) - 0.6 - - - - - - 1.3 1.2 2.6 2.0 V V V v Gain Bandwidth Product at IC=20mA, VCE=20V, f=100MHz fT 250 - - MHz Collector Output Capacitance at VCB=10V, f=1MHz Cob - - 8 pF Input Capacitance at VCB=0.5V, f=1MHz Cib - - 30 pF G S P FORM A IS AVAILABLE 1000 700 500 300 200 100 70 50 30 20 10 0.1 h FE , D C C U R R EN T G A IN 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 K VCE=1.0V VCE=10V TJ=125 C 25 C -55 Co o o IC, COLLECTOR CURENT (mA) Figure 1. DC Current Gain IB, BASE CURENT (mA) 0.3VC E, C O LL EC TO R -E M IT TE R V O LT A G E (V O LT S) 0.01 0 0.005 0.4 0.6 1.0 0.8 0.03 0.05 0.1 0.2 100.5 1.0 2.0 3.0 5.0 5020 30 Figure 2. Collector Saturetion Region 0.2 0.02 IC=1.0mA 10mA 150mA 500mA oTJ= 25 C 2N2222 / 2N2222A o VCE=20V TJ= 25 C 10 7.0 0.20.1 2.0 3.0 5.0 0.50.3 0.7 2.0 5.03.0 7.0 10 20 30 20 Figure 3. Capacitances REVERSE VOLTAGE (VOLTS) 30 501.0 IC, COLLECTOR CURRENT (mA) 3.0 fT , C U R R EN T- G A IN B A N D W ID TH P R O D U C T (M H z) 70 50 1.0 2.0 300 100 200 500 105.0 7.0 20 30 50 Figure 4. Current-Gain Bandwidth Product 70 100 Ceb Ccb 2N2222 / 2N2222A
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