Transistor BC547

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BC546 / BC547 / BC548 / BC549 / BC550 \u2014 NPN Epitaxia l Silicon T ransistor © 2002 Fairchi ld Semiconductor Corp oration www.fair childsemi.com BC546 / BC547 / BC54 8 / BC549 / BC550 Rev. 1.1.1 1 November 2014 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epit axial Silicon T ransistor Features \u2022 Switching and Amplifier \u2022 High-Voltage: B C546, V CEO = 65 V \u2022 Low-Noise: BC549, BC550 \u2022 Complement to BC556 , BC557, BC558, BC559, and BC560 Ordering Information Part Number Marking Package Packing Method BC546ABU BC54 6A TO-92 3L Bulk BC546A T A BC546A TO-92 3L Ammo BC546BT A BC546B TO-92 3L Ammo BC546BTF BC546B T O-92 3L T ape and Reel BC546CT A BC546C TO-92 3L Ammo BC547A T A BC547A TO-92 3L Ammo BC547B BC547B TO-92 3L Bulk BC547BBU BC54 7B TO-92 3L Bulk BC547BT A BC547B TO-92 3L Ammo BC547BTF BC547B T O-92 3L T ape and Reel BC547CBU BC547C TO-92 3L Bulk BC547CT A BC547C TO-92 3L Ammo BC547CTFR BC547C TO-92 3L T ape and Reel BC548BU B C548 TO-92 3L Bulk BC548BT A BC548B TO-92 3L Ammo BC548CT A BC548C TO-92 3L Ammo BC549BT A BC549B TO-92 3L Ammo BC549BTF BC549B TO-92 3L T ape and Reel BC549CT A BC549C TO-92 3L Ammo BC550CBU BC550C TO-92 3L Bulk BC550CT A BC550C TO-92 3L Ammo 1. Collector 2. Base 3. Emitte r TO-92 1 BC546 / BC547 / BC548 / BC549 / BC550 \u2014 NPN Epitaxia l Silicon T ransistor © 2002 Fairchi ld Semiconductor Corp oration www.fair childsemi.com BC546 / BC547 / BC54 8 / BC549 / BC550 Rev. 1.1.1 2 Absolute Maximum Ratings S tresses exceeding the absolute max imum ratings may d amage the device. The device may not function or be opera- ble above the re commended operating conditi ons and stressing the part s to these levels is not re commended. In addi- tion, extende d exposure to stresses a bove the reco mmended operating cond itions may af fect device reliabil ity . The absolute maximu m ratings are s tress ratings only . V alues are at T A = 25°C unless otherwise noted. Electrical Characteristics V alu es are at T A = 25°C unless otherwise noted. h FE Classification Symbol Parameter V alue Unit V CBO Collector -Base V oltage BC546 80 V BC547 / BC550 50 BC548 / BC549 30 V CEO Collector-Emitter V oltage BC546 65 V BC547 / BC550 45 BC548 / BC549 30 V EBO Emitter-Bas e V oltage BC546 / BC547 6 V BC548 / BC549 / BC550 5 I C Collector Current (DC) 100 mA P C Collector Power Dissip ation 500 mW T J Junction T emperat ure 150 ° C T STG S torage T emperature Rang e -65 to +150 ° C Symbol Parameter Conditions Min. T yp. Max. Unit I CBO Collector Cut-Off Current V CB = 30 V , I E = 0 15 nA h FE DC Current Gain V CE = 5 V , I C = 2 mA 1 10 800 V CE (sat) Collector-Emitter Sa turation Vo l t a g e I C = 10 mA , I B = 0.5 mA 90 250 mV I C = 100 mA, I B = 5 mA 250 600 V BE (sat) Base-Emitter Saturation V oltage I C = 10 mA , I B = 0.5 mA 700 mV I C = 100 mA, I B = 5 mA 900 V BE (on) Base-Emitter On V oltage V CE = 5 V , I C = 2 mA 580 660 700 mV V CE = 5 V , I C = 10 mA 720 f T Current Gain Bandwid th Product V CE = 5 V , I C = 10 mA, f = 100 MH z 300 MHz C ob Output Capacitance V CB = 10 V , I E = 0, f = 1 MHz 3.5 6.0 pF C ib Input Cap acitance V EB = 0.5 V , I C = 0, f = 1 MHz 9 pF NF Noise Figure BC546 / BC547 / BC548 V CE = 5 V , I C = 200 \u03bc A, f = 1 kHz, R G = 2 k \u03a9 2.0 10.0 dB BC549 / BC550 1.2 4.0 BC549 V CE = 5 V , I C = 200 \u03bc A, R G = 2 k \u03a9, f = 30 to 15000 MHz 1.4 4.0 BC550 1.4 3.0 Classification A B C h FE 1 10 ~ 220 200 ~ 450 420 ~ 800 BC546 / BC547 / BC548 / BC549 / BC550 \u2014 NPN Epitaxia l Silicon T ransistor © 2002 Fairchi ld Semiconductor Corp oration www.fair childsemi.com BC546 / BC547 / BC54 8 / BC549 / BC550 Rev. 1.1.1 3 T ypical Performance Characteristics Figure 1. Static Charac teristic Figure 2. Transf er Characteristic Figure 3. DC Current Gain Figure 4. Base-Emitt er Saturation Voltage and Collector-Emitter Satura tion Voltage Figure 5. Output Capa citance Figure 6. Current Gain Bandwidth Pro duct 0 2 4 6 8 1 01 21 41 61 82 0 0 20 40 60 80 100 I B = 50 \u03bc A I B = 100 \u03bc A I B = 150 \u03bc A I B = 200 \u03bc A I B = 250 \u03bc A I B = 300 \u03bc A I B = 350 \u03bc A I B = 400 \u03bc A I C [mA], COLLECTOR CURRENT V CE [V], COLLECTOR-EMITTER VOLTAGE 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 V CE = 5V I C [mA], COLLECTOR CURRENT V BE [V], BASE-EM ITTER VOLTAGE 1 10 100 1000 1 10 100 1000 V CE = 5V h FE , DC CURRENT GAIN I C [mA], COLLECTOR CURRENT 1 10 100 1000 10 100 1000 10000 I C = 10 I B V CE (sat) V BE (sat) V BE (sat), V CE (sat)[mV] , SATURATION VOLTAGE I C [mA], CO LLECTOR CURRENT 1 10 100 1000 0.1 1 10 100 f=1MHz I E = 0 C ob [pF], CAPACITANCE V CB [V], COLLECTOR-BASE VOLT AGE 0.1 1 10 100 1 10 100 1000 V CE = 5V f T , CURRENT GAIN-BANDWIDTH PRODUCT I C [mA], COLLECTOR CURRENT BC546 / BC547 / BC548 / BC549 / BC550 \u2014 NPN Epitaxia l Silicon T ransistor © 2002 Fairchi ld Semiconductor Corp oration www.fair childsemi.com BC546 / BC547 / BC54 8 / BC549 / BC550 Rev. 1.1.1 4 Physical Dimensions Figure 7. 3-Lead, TO-92, JEDEC TO-9 2 Compliant S traight Lead Configuration, Bulk T ype D BC546 / BC547 / BC548 / BC549 / BC550 \u2014 NPN Epitaxia l Silicon T ransistor © 2002 Fairchi ld Semiconductor Corp oration www.fair childsemi.com BC546 / BC547 / BC54 8 / BC549 / BC550 Rev. 1.1.1 5 Physical Dimensions (Contin ued) Figure 8. 3-Lead, T O-92, Molded, 0.2 In Line Sp acing Lead Form, Am mo, T ape and Reel T ype © Fairchild Semiconductor Corporatio n www.fairchildsemi.com TRADEMARKS The following includes reg istered and un registered trademarks and service ma rks, owned by Fairchild Semico nductor and/or its gl obal subsidiaries, and is not intended to be an exhaustiv e list of all such tra demarks. 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Transistor BC547

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Eletrônica Digital

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