Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_399

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Step 1 of 2 3.003P The majority carriers are holes and minority carriers are electrons in a p type semiconductor. The intrinsic carrier density for Silicon at T = 300 K is, n, = The acceptor doping concentration or doping concentration of the p side is, = 10" If the acceptor doping concentration is N, , where N, n, then the majority hole concentration becomes = Therefore, the hole concentration at K is, Step 2 of 2 The concentration of minority electrons is, Substitute carriers / for P, to calculate the minority electron concentration. = = 45 carriers/cn Therefore, the electron concentration at T = 300 K is, 45 carriers/cm³