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Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_402

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Step 1 of 3 3.005E Refer to Figure E3.5 in the textbook for the linear electron-concentration profile for silicon semiconductor. We have = The electron current density is, Here, q is the charge of an electron, is the diffusion constant of the holes, D, = 35 for silicon and dn(x) is the concentration gradient or the slope of the concentration profile. dx From the linear electron-concentration profile for silicon semiconductor, write the following relation: Substitute 10" for n₀ and 1 µm for W in the equation. µm = = 1029 Step 2 of 3 The current density is, Substitute 1.6x10⁻¹⁹ C for 35 for D, and 1029 for dn(x) in the equation. = 56 Thus, the current density is, Step 3 of 3 The diffusion current is, = A A Substitute 1 mA for and 56 for in the equation. = 17.86 18 µm² Thus, the cross-sectional area is 18 µm²

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