Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_394

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Step 1 of 2 3.001E Calculate the intrinsic carrier density for silicon at T = 50K. Here, B is a material dependent parameter, is bandgap k is Boltzmann's constant. Substitute 7.3 X for 1.12 eV for E₈ , 50 K for T and 8.62 10⁻⁵ eV/K for k in the equation. n, = Thus, the intrinsic carrier density for silicon at T = 50 K , n, is 9.6x10⁻³⁹ Step 2 of 2 Calculate the intrinsic carrier density for silicon at T = 350K. Substitute 7.3 for B 1.12 eV for E₈ 8.62 10⁻⁵ eV/K for k and 3501 K for T in the equation. n, II Thus, the intrinsic carrier density for silicon at T = 350 K , n, is