Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_612

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Step of 7 5.033P Minimum length of the MOS technology n- channel device is 0.5 µm Value of is Channel length and the value of are inversely related to each other, Where is constant which depends on type of technology used. V/m Step of 7 For a device length of the channel is 1.5 µm and the corresponding value of is 1 Substitute value of in the above equation = 100 Value of is is 0.01 Step of 7 Drain current with channel-length modulation effect is considered is, For equal to 1 V drain current is 100 (1) is raised to 5V new drain current is iD (2) Step of 7 Divide equation (2) with (1) and substitute value of in = W (1+25) = (1+(0.01)5) (1+(0.01)1) Drain current for VDs is raised to 5V is Step of 7 Percentage change in drain current is, (104-100)x100=4% 100 Percentage change in drain current for VDs is raised to 5 V is 4% Step of 7 Drain current percentage is reduced by a factor of 2, therefore new drain current percentage is 2% Let new drain current is iD 100 New drain current iD is 102 mA Step of 7 In order to reduce percentage of drain current by a factor of 2, we have to reduce (3) Divide equation (3) with (1) and substitute value of in = 102 100 102 = 100 (1+0.01) =3.02 V In order to reduce drain current by a factor of 2, we have to reduce to 3.02 V