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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 8 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 210 1616 105.1 104104 ln0259.0biV 7665.0 V and 2/1 2 da daRbis NN NN e VV W 19 14 106.1 57665.01085.87.112 2/1 1616 1616 104104 104104 510109.6 W cm Then 7 510194 102 10109.6105.1106.110 genI 1110331.7 A (c) 4 15 11 1016.3 10323.2 10331.7 s gen I I _______________________________________ 8.29 (a) Set genS II , 000 2 2 11 WAenD N D N Aen i p p dn n a i 716716 10 10 104 1 10 25 104 1 in 7 5 0 102 10109.6 2 W so 1313 2 1050.2109528.3 100545.3 in 1410734.4 cm 3 Then 292 102407.2 in 3 1919 300 1004.1108.2 T T T 0259.0 30012.1 exp 300 106947.7 3 10 By trial and error, 567T K We have 02 WAen II i gens 7 514194 102 10109.610734.4106.110 Then gens II 610314.2 A or 314.2 gens II A (b) From Problem 8.28 1510323.2 sI A 1110331.7 genI A So t a gen t a s V V I V V II 2 expexp t a V V exp10323.2 15 t a V V 2 exp10331.7 11 15 11 10323.2 10331.7 2 exp exp t a t a V V V V 4101558.3 2 exp t a V V 4101558.3ln2 ta VV 5366.0 V _______________________________________ 8.30 55000259.0 nn e kT D 5.142 cm 2 /s 70.52200259.0 pD cm 2 /s (a) (i) 00 2 11 p p dn n a is D N D N AenI 26194 108.1106.1102 816816 102 70.5 107 1 102 5.142 107 1 221050.1 sI A