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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 8 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 8.47 (a) If 2.0 F R I I Then we have 2.01 1 1 1 F RRF F pO s I III It erf or 833.0 pO sterf We find 956.0978.0 pO s pO s tt (b) If 0.1 F R I I , then 50.0 11 1 pO sterf which yields 228.0 pO st _______________________________________ 8.48 (a) erf RF F p s II It erf 3.0 = erf 5477.0 erf 56332.055.0 Then F R I I 1 1 56332.0 775.01 56332.0 1 F R I I (b) erf F R p p p I I t t t 1.01 exp 0 2 0 2 0 2 775.01.01 0775.1 By trial and error, 80.0 0 2 p t _______________________________________ 8.49 18jC pF at 0RV 2.4jC pF at 10RV V We have 710 pOnO s , 2FI mA and 1 10 10 R V I R R mA So 1 2 1ln101ln 7 R F pOs I I t or 7101.1 st s Also 1.11 2 2.418 avgC pF The time constant is 124 101.1110 avgS RC 71011.1 s Now, the turn-off time is 71011.11.1 Ssoff tt or 71021.2 offt s _______________________________________ 8.50 136.1 105.1 105 ln0259.0 210 219 biV V We find 2/1 2 da daabis NN NN e VV W 19 14 106.1 40.0136.11085.87.112 2/1 219 1919 105 105105 which yields 71017.6 W cm o A7.61 _______________________________________ 8.51 Sketch _______________________________________