Prévia do material em texto
Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 12 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 12.48 (a) C BCB s B pt N NNNex V 2 2 0 14 2419 1085.87.112 1065.0106.1 155 102105102 161516 6.32ptV V (b) From Chapter 7, 2/1 max 2 CB CB s pt NN NNeV 14 19 1085.87.11 6.32106.12 2/1 1615 1615 102105 102105 5 max 1001.2 V/cm _______________________________________ 12.49 C BCB s B pt N NNNex V 2 2 0 14 2 0 19 1085.87.112 106.1 15 Bx 15 161516 103 105103105 5 0 10483.1 Bx cm 1483.0 m _______________________________________ 12.50 We have R F FCBF BRC tCE II II VsatV 1 1 ln We can write 20.0 99.0 99.01199.0 2.011 0259.0 exp B BCE I IsatV or 95.4 01.099.0 8.0 0259.0 exp B BCE I IsatV (a) For 30.0satVCE V, we find 5100726.1 0259.0 30.0 exp 95.4 01.099.0 8.0 B B I I We find 01014.0BI mA 14.10 A (b) For 20.0satVCE V, we find 0119.0BI mA 9.11 A (c) For 10.0satVCE V, we find 105.0BI mA 105 A _______________________________________ 12.51 For an npn transistor biased in the active mode, we have 0BCV , so that 0exp t BC V V . Now ECBCBE IIIIII 0 Then we have CS t BE ESFB I V V II 1exp 1exp t BE ESCSR V V II or 1exp1 t BE ESFB V V II CSR I 1 _______________________________________ 12.52 We can write 1exp t BE ES V V I E t BC CSR I V V I 1exp Substituting, we find E t BC CSRFC I V V II 1exp 1exp t BC CS V V I