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Semiconductor Physics and Devices: Basic Principles, 4
th
 edition Chapter 10 
By D. A. Neamen Problem Solutions 
______________________________________________________________________________________ 
 
 
(c)  2
2
TSG
p
D VV
L
Wk
I 

 
   2
4.02.115
2
10.0






 
 48.0 mA 
(d) Same as (c), 48.0DI mA 
_______________________________________ 
 
10.35 
(a)  2
2
TGS
n
D VV
L
Wk
I 

 
  2
8.04.1
2
6.0
0.1 












L
W
 
 26.9
L
W
 
(b)   2
8.085.126.9
2
6.0






DI 
 06.3 mA 
(c)   22
2
DSDSTGS
n
D VVVV
L
Wk
I 

 
        2
15.015.08.02.1226.9
2
6.0






 
 271.0 mA 
_______________________________________ 
 
10.36 
(a) Assume biased in saturation region 
  2
2
TSG
p
D VV
L
Wk
I 

 
   2
020
2
12.0
10.0 TV





 
 289.0 TV V 
 Note: 0.1SDV V 289.00 TSG VV V 
 So the transistor is biased in the saturation 
region. 
(b)   2
289.04.020
2
12.0






DI 
 570.0 mA 
(c)      15.0289.06.0220
2
12.0






DI 
   2
15.0 
or 
 293.0DI mA 
_______________________________________ 
 
 
 
10.37 
 
   7
8
14
10138.3
10110
1085.89.3 





oxC F/cm 2 
 
   
 2.12
2010138.3425
2
7

L
WC
K oxn
n

 
 310111.1  A/V 2 =1.111 mA/V 2 
(a) 0GSV , 0DI 
 6.0GSV V,   15.0satVDS V, 
     245.06.0111.1 satI D 
 025.0 mA 
 2.1GSV V,   75.0satVDS V, 
     2
45.02.1111.1 satI D 
 625.0 mA 
 8.1GSV V,   35.1satVDS V, 
     2
45.08.1111.1 satI D 
 025.2 mA 
 4.2GSV V,   95.1satVDS V, 
     2
45.04.2111.1 satI D 
 225.4 mA 
(c) 0DI for 45.0GSV V 
 6.0GSV V, 
        2
1.01.045.06.02111.1 DI 
 0222.0 mA 
 2.1GSV V, 
        2
1.01.045.02.12111.1 DI 
 156.0 mA 
 8.1GSV V, 
        2
1.01.045.08.12111.1 DI 
 289.0 mA 
 4.2GSV V, 
        2
1.01.045.04.22111.1 DI 
 422.0 mA 
_______________________________________ 
 
10.38 
 
  
8
14
10110
1085.89.3







ox
ox
ox
t
C 
 
710138.3  F/cm 2 
 
L
WC
K
oxp
p
2

 
 
   
 2.12
3510138.3210 7
 
 
41061.9  A/V 2 =0.961 mA/V 2