AO4924 datasheet

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Symbol Max FET1 Max FET2
VDS 30 30
VGS ±12 ±12
9.0 7.3
7.2 5.9
IDM 40 40
IAR 16 12
EAR 38 22
2.0 2.0
1.3 1.3
TJ, TSTG -55 to 150 -55 to 150
Symbol Typ Max
48 62.5
74 90
RθJL 32 40
Symbol Typ Max
48 62.5
74 90
RθJL 32 40Maximum Junction-to-Lead C Steady-State °C/W
Thermal Characteristics FET2
Parameter Units
Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/WMaximum Junction-to-Ambient A Steady-State °C/W
Avalanche Current B A
Repetitive avalanche energy L=0.3mH B mJ
°C
Maximum Junction-to-Ambient A Steady-State
A
W
UnitsParameter
Power Dissipation 
TA=25°C PDSM
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
VGate-Source Voltage
Drain-Source Voltage
°C/W
Thermal Characteristics FET1
Parameter Units
Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W
°C/W
Continuous Drain
Current A
TA=25°C
Maximum Junction-to-Lead C Steady-State
Junction and Storage Temperature Range
TA=70°C
IDSM
Pulsed Drain Current B
AO4924
Asymmetric Dual N-Channel MOSFET
Product Summary
FET1 FET2
VDS (V) = 30V VDS(V) = 30V
ID = 9A ID=7.3A (VGS = 10V)
RDS(ON) < 15.8mΩ <24mΩ (VGS = 10V)
RDS(ON) < 19.5mΩ <29mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
General Description
The AO4924 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky
diode in parallel with the synchronous MOSFET to
boost efficiency further.
SRFET TM 
SOIC-8
Top View Bottom View
Pin1
G2
S2
G1
S1
D2
D2
D1
D1
2
4 5
1
3
8
6
7
 Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO4924
Symbol Min Typ Max Units
BVDSS 30 V
VDS=24V, VGS=0V 0.01 0.1
TJ=125°C 5 10
IGSS 0.1 µA
VGS(th) Gate Threshold Voltage 1.5 1.85 2.4 V
ID(ON) 40 A
13 15.8
TJ=125°C 20.0 25.0
15.7 19.5 mΩ
gFS 64 S
VSD 0.4 0.6 V
IS 4.5 A
Ciss 1450 1885 pF
Coss 224 pF
Crss 92 pF
Rg 1.6 3 Ω
Qg(10V) 24.0 31
Qg(4.5V) 12.0 nC
Qgs 3.9 nC
Qgd 4.2 nC
tD(on) 5.5 ns
tr 4.7 ns
tD(off) 24.0 ns
tf 4.0 ns
trr 10 13 ns
Qrr 6.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=1mA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=9A
Reverse Transfer Capacitance
IF=9A, dI/dt=300A/µs
VDS=VGS ID=250µA
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
IDSS Zero Gate Voltage Drain Current mA
VDS=0V, VGS= ±12VGate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
mΩ
VGS=4.5V, ID=7A
IS=1A,VGS=0V
VDS=5V, ID=9A
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
Total Gate Charge
VGS=10V, VDS=15V, ID=9A
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on T(J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R
 θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: May 2011
Alpha & Omega Semiconductor, Ltd.
AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
DYNAMIC PARAMETERS
0
20
40
60
80
100
0 1 2 3 4 5
VDS (Volts)
Figure 1: On-Region Characteristics
I D
 
(A
)
10V
4V
VGS=3V
6V
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
VGS(Volts)
Figure 2: Transfer Characteristics
I D
(A
)
8
11
14
17
20
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
S(
O
N
) (m
ΩΩ ΩΩ
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS
 
(A
) 25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 30 60 90 120 150 180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
rm
a
liz
e
d 
O
n
-
R
e
s
is
ta
n
c
e ID=9A
VGS=10V
VGS=4.5V
5
10
15
20
25
30
35
40
45
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
S(
O
N
) (m
ΩΩ ΩΩ
)
25°C125°
VDS=5V
VGS=4.5V
VGS=10V
ID=9A
25°C
125°C
ID=7A
3.5V
4.5V
Alpha & Omega Semiconductor, Ltd.
AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
DYNAMIC PARAMETERS
0
2
4
6
8
10
0 5 10 15 20 25
Qg (nC)
Figure 7: Gate-Charge Characteristics
V G
S 
(V
o
lts
)
0
500
1000
1500
2000
2500
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Ca
pa
c
ita
n
c
e
 
(pF
) Ciss
Coss
Crss
0.01
0.10
1.00
10.00
100.00
0.01 0.1 1 10 100
VDS (Volts)
I D
 
(A
m
ps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10µs
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µ
VDS=15V
ID=9A
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Z θθ θθ
JA
 
N
o
rm
a
liz
e
d 
Tr
a
n
s
ie
n
t
Th
e
rm
a
l R
e
s
is
ta
n
c
e
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0
10
20
30
40
50
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r 
(W
)
TJ(Max)=175°C
TC=25°C
1s
Alpha & Omega Semiconductor, Ltd.
AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
DYNAMIC PARAMETERS
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 50 100 150 200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
I R
 
(A
)
VDS=12V
VDS=24V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
V S
D
(V
)
0
5
10
15
20
25
30
0 5 10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Q r
r 
(nC
)
0
2
4
6
8
10
12
Irm(A
)
di/dt=800A/us
0
2
4
6
8
10
12
0 5 10 15 20 25 30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
tr
r 
(ns
)
0
0.5
1
1.5
2
2.5
3
S
IS=1A
10A
20A
0
5
10
15
20
25
0 200 400 600 800 1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q r
r 
(nC
)
0
2
4
6
8
10
Irm
 
(A
)
0
3
6
9
12
15
0 200 400 600 800 1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
tr
r 
(ns
)
0
0.5
1
1.5
2
2.5
S
di/dt=800A/us125ºC 125ºC
125ºC
125ºC
125ºC
125º
125ºC
125ºC
25ºC
25ºC 25ºC
25ºC
25ºC
25ºC
25ºC
25ºC
Is=20A
Is=20A
Qrr
Irm
trr
Qrr
Irm
trr
S
S
5A
Alpha & Omega Semiconductor, Ltd.
AO4924
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 0.7 1 1.5 V
ID(ON) 40 A
20 24
TJ=125°C 28 34
23.5 29 mΩ
gFS 26 S
VSD 0.71 1 V
IS 4.5 A
Ciss 900 1100 pF
Coss 88 pF
Crss 65 pF
Rg 0.95 1.5 Ω
Qg 10 12 nC
Qgs 1.8 nC
Qgd 3.75 nC
tD(on) 3.2 ns
tr 3.5 ns
tD(off) 21.5 ns
tf 2.7 ns
trr 16.8 20 ns
Qrr 8 12 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=7.3A
Reverse Transfer Capacitance
IF=7.3A, dI/dt=100A/µs
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Diode Forward Voltage
VGS=0V, VDS=15V, f=1MHz
DYNAMIC PARAMETERS
µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
Zero Gate Voltage Drain CurrentIDSS
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Gate-Body leakage current
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=2Ω,
RGEN=6Ω
Turn-Off Fall Time
Turn-On DelayTime
VGS=4.5V, VDS=15V, ID=7.3AGate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
mΩ
VGS=4.5V, ID=6A
IS=1A,VGS=0V
VDS=5V, ID=7.3A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
A: The value of R
 θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
 θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
 A=25°C. The SOA
curve provides a single pulse rating.
Rev2: May 2011
Alpha & Omega Semiconductor, Ltd.
AO4924
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
10
20
30
40
50
60
0 1 2 3 4 5
VDS (Volts)
Fig 1: On-Region Characteristics
I D
 
(A
)
VGS=2V
2.5V
3V
4.5V
10V
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3
VGS(Volts)
Figure 2: Transfer Characteristics
I D
(A
)
15
20
25
30
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
S(
O
N
) (m
ΩΩ ΩΩ
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
I S
 
(A
)
25°C
125°C
0.6
0.9
1.2
1.5
1.8
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
rm
a
liz
e
d 
O
n
-
R
e
s
is
ta
n
c
e
VGS=10V
ID=7.3A
ID=6A
VGS=4.5V
10
15
20
25
30
35
40
45
50
55
60
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
S(
O
N
) (m
ΩΩ ΩΩ
)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=7.3A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO4924
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
1
2
3
4
5
0 2 4 6 8 10 12
Qg (nC)
Figure 7: Gate-Charge Characteristics
V G
S 
(V
o
lts
)
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Ca
pa
c
ita
n
c
e
 
(pF
) Ciss
0
10
20
30
40
50
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r 
(W
)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z θθ θθ
JA
 
N
o
rm
a
liz
e
d 
Tr
a
n
s
ie
n
t
Th
e
rm
a
l R
e
s
is
ta
n
c
e
Coss
Crss
0.01
0.10
1.00
10.00
100.00
0.01 0.1 1 10 100
VDS (Volts)
I D
 
(A
m
ps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10µs
1ms
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=7.3A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C100µs
Alpha & Omega Semiconductor, Ltd.
AO4924
Coss
Crss
VDS=15V
ID=7.3A
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C100µs
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDCDUT VddVgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t rd(on)
t on
t d(off) t f
toff
VddVgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
IsdIsd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
VddVdd
Q = - Idt
trr
ARAR
Alpha & Omega Semiconductor, Ltd.