Preface_2005_Dilute-Nitride-Semiconductors

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Preface 
The development of epitaxial growth technologies such as Molecular Beam Epitaxy 
(MBE) and Metal-Organic Chemical Vapour Epitaxy (MOCVD) has provided the 
possibility of producing very pure semiconductors and very well-defined layered 
structures known as Low Dimensional Structures (LDS). These structures, which display 
new physical phenomena, have led to a great improvement in our understanding of the 
basic physics of electrons and holes in semiconductors. Research on quantum wells 
(QWs), quantum dots (QDs), superlattices and heterostructures has rapidly expanded 
during the last few years due to their potential applications in novel devices and their 
many unique physical properties. The LDS technology is at the heart of many of the 
highest performance electronic and optoelectronic technologies being developed today. 
This is true not only in the research laboratories but also in the commercial marketplace. 
A brief assessment of the development of electronic and optoelectronic devices reveals 
the essential role played by compound semiconductor materials technology. 
This technology is highly sophisticated and the vision is of a new class of advanced 
semiconductor materials in which the band structure, for example, can be controlled by 
incorporating nitrogen in III-V semiconductors. The incorporation of small amounts of 
nitrogen, for example in III-V arsenides compound semiconductors, results in a decrease 
in the band gap such that it is possible to grow narrow band gap epilayers that exhibit 
optical emission in the technologically important 1.3-1.55 p~m wavelength range on GaAs 
substrates. 
After the proposal of GaInAsN as a material for long wavelength emission on GaAs 
by M. Kondow et al. (Jpn. J. Appl. Phys., 35 1273 1996), many laboratories are developing 
the technology of these materials due to the interest in its fundamental material physics 
and potential applications in QW and QD lasers. The investigation of dilute nitrides 
is revitalising semiconductor materials. These new materials offer device engineers new 
design opportunities for tailor-made new-generation electronic devices. 
Research in this strategically important area has already led to the demonstration of 
long-wavelength emission from QW laser devices, which are now commercially available 
using a (In,Ga)(As,N)/GaAs material system. In addition, novel dilute nitride-arsenide 
semiconductors QDs are expected to produce further extension of the lasing wavelength 
suitable for the optoelectronic communications industry. 
This book represents a timely and much needed attempt to bring together all the factors 
which are essential in dilute nitrides. The 18 chapters which make up this book give an 
account of the progress and challenges of III-N-V semiconductor alloys from their growth 
to device design and fabrication. It aims to convey important results and current ideas, and 
to provide an enjoyable account of a rapidly developing field. Moreover, the authors of this 
vi Preface 
book represent some of their own ongoing work. We trust that the publication of this 
book will contribute to the development of research and innovation in this exciting field of 
dilute nitrides. 
It is a pleasure to express special thanks and appreciation to the authors for their 
considerable efforts in contributing to this book. I would also like to acknowledge the 
assistance of the many individuals who donated their time to help make this a successful 
book. 
Special thanks go to all the people working at Elsevier for their invaluable help in the 
editorial process and for facilitating the rapid and accurate publication of this book. 
Mohamed Henini 
School of Physics and Astronomy 
University of Nottingham 
Nottingham, NG7 2RD, UK