Chegg Solutions for Microelectronic Circuits (Adel S Sedra, Kenneth C Smith) (Z-Library)_parte_418

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Step of 3 3.013E Consider the following expression for the width of the depletion region, W corresponding to the forward voltage, W Here, the electrical permittivity of silicon, the charge of electron, q=1.6x10⁻¹⁹ the acceptor doping concentration or doping concentration of the p side, = the donor doping concentration, = the barrier voltage, and the reverse bias voltage, = Substitute these values in the equation for - W = 1.6x10⁻¹⁹ = = = cm Convert centimetres into meters. m =0.60785 µm Therefore, the width of the depletion region, W is, 0.60785 Step 2 of 3 Consider the following expression for the charge stored in the depletion region: Here, the area of the pn junction, Substitute the known values in the equation for = Simplify further. =9.63 pC Therefore, the charge stored in the depletion region, Q, is, 9.63 pC Step 3 of 3 Consider the following expression for the saturation current, Iₛ for a pn junction semiconductor configuration: = Here, the intrinsic carrier density, n, carriers/cm³ , the diffusion length of the holes in the n region, L, = 5 the diffusion length of the electrons in the p region, the diffusion constant of the holes, D, (in the n region) is 10 / and the diffusion constant of the electron (in the p region) is in the above equation for Substitute the known values in the equation for = = = A Therefore, the reverse saturation current, Iₛ is, A