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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 6 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ and 21 2 2 CxCx D G p p o For LxL 3 , 0g so we have 0 2 2 dx pd so that 3C dx pd and 43 CxCp For LxL 3 , 0g so that 0 2 2 dx pd so that 5C dx pd and 65 CxCp The boundary conditions are: (1) 0p at Lx 3 (2) 0p at Lx 3 (3) p continuous at Lx (4) p continuous at Lx (5) dx pd continuous at Lx (6) dx pd continuous at Lx Applying the boundary conditions, we find 225 2 xL D G p p o for LxL xL D LG p p o 3 for LxL 3 xL D LG p p o 3 for LxL 3 _______________________________________ 6.27 20 4.0 8 0 L V V/cm 6 00 103220 25.0 t d p 6.390 cm 2 /V-s 0 22 0 16t t D p p 6 262 103216 1035.9206.390 42.10pD cm 2 /s We find 02668.0 6.390 42.10 p pD V This value is very close to 0.0259 for 300T K. _______________________________________ 6.28 (a) Assume that Dt x Dttxf 4 exp4, 2 2/1 is the solution to the differential equation t f x f D 2 2 To prove: we can write Dt x Dt x Dt x f 4 exp 4 2 4 2 2/1 and Dt x Dt x Dt x f 4 exp 4 2 4 22 2/1 2 2 Dt x Dt 4 exp 4 2 2 Also Dt x tD x Dt t f 4 exp 1 4 4 2 2 2 2/1 Dt x tD 4 exp 2 1 4 2 2/32/1 Substituting the expressions for 2 2 x f and t f into the differential equation, we find 0 = 0. Q.E.D. (b) Consider dx Dt x 4 exp 2 Let 2xu , then dxxdu 2 or u du x du dx 22 Let Dt a 4 1 Now