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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 7 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 2612 1025.1210904.4 1 L 310306.3 H 306.3 mH (b) (i) For 1RV V, 14.12C pF 2/1123 1014.1210306.32 1 f 51094.7 Hz 794.0 MHz (ii) For 5RV V, 704.6C pF 2/1123 10704.610306.32 1 f 610069.1 Hz 069.1 MHz _______________________________________ 7.26 2/1 max 2 s dRbi NVVe Let 75.0biV V (a) 25105.2 14 19 1085.87.11 1075.0106.12 dN 161088.1 dN cm 3 (b) 2510 14 19 1085.87.11 1075.0106.12 dN 151001.3 dN cm 3 _______________________________________ 7.27 pnp xxWx 20.020.0 np xx 2.08.0 pn xx 4 pdndpa xNxNxN 4 da NN 4 (a) 2 ln i da tbi n NN VV 26 2 108.1 4 ln0259.0 dN 2/1 2 daRbi das NNVV NNe ACAC 22 1085.81.13106.1 10 1419 4 biV 2/1 2 5 4 d d N N 2 10724.2106.0 2012 bi d V N By trial and error, 1510504.1 dN cm 3 , 1510016.6 aN cm 3 , 10.1biV V (b) From part (a), 5 10724.2106.0 2012 bi d V N By trial and error, 1510976.2 dN cm 3 , 161019.1 aN cm 3 , 135.1biV V _______________________________________ 7.28 (a) 210 1415 105.1 10105 ln0259.0biV or 5574.0biV V (b) 2/1 12 daa dbis p NNN N e V x 19 14 106.1 5574.01085.87.112 2/1 151415 14 10510 1 105 10 or 61032.5 px cm Also 2/1 12 dad abis n NNN N e V x