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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 14 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ By trial and error, 402.0mV V t m SLm V V III exp 0259.0 402.0 exp10210180 93 11069.1 A 169 mA 9.67402.0169 mmm VIP mW (c) 379.2 169.0 402.0 m m L I V R (d) 568.3379.25.1LR Now t SL L V V II R V I exp 0259.0 exp10210180 568.3 93 VV By trial and error, 444.0V V Then 1244.0 568.3 444.0 LR V I A 2.55444.04.124 IVP mW _______________________________________ 14.16 (a) 10 3 10 10100 1ln0259.0ocV 5367.0 V (b) S L t m t m I I V V V V 1exp1 10 3 10 10100 1 910 By trial and error, 461.0mV V Then 0259.0 461.0 exp1010100 103 mI 210463.9 A 63.94 mA 62.43461.063.94 mmm VIP mW (c) 227.21 461.0 10 nn cells (d) Now 14.10461.022 V V IVP 5128.014.102.5 II A Then 642.5 09463.0 5128.0 nn (e) Then 5678.009463.06 I A So 86.17 5678.0 14.10 I V RL _______________________________________ 14.17 Let 0x correspond to the edge of the space charge region in the p-type material. Then in the p-region 0 2 2 n p L p n n G dx nd D or n L n pp D G L n dx nd 22 2 where xxG OL exp Then we have x DL n dx nd n O n pp exp 22 2 The general solution is of the form nn p L x B L x Axn expexp x Ln nO exp 122 As x , 0pn so that 0B . Then x LL x Axn n nO n p exp 1 exp 22 We also have 1 00 22 n nO p L An , which yields 122 n nO L A We then obtain x L x L xn nn nO p expexp 122 where O is the incident flux at 0x . _______________________________________ 14.18 For 90% absorption, we have 10.0exp x x O Then